Boron Nitride Encapsulation Improves Performance of 2D Semiconductor

  • Gwan-Hyoung Lee

Press/Media: Press / Media

Period2015 Apr 28

Media coverage

1

Media coverage

  • TitleBoron Nitride Encapsulation Improves Performance of 2D Semiconductor
    Media name/outletAZoM
    CountryAustralia
    Date15/4/28
    URLwww.azom.com/news.aspx?newsID=43721
    PersonsGwan-Hyoung Lee