Electronics and Telecommunications Research Institute Awarded Patent for Semiconductor Device Having a Drain Electrode Contacting an EPI Material Inside a Through-Hole and Method of Manufacturing the Same

Press/Media: Press / Media

Period2020 Mar 31

Media coverage

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Media coverage

  • TitleElectronics and Telecommunications Research Institute Awarded Patent for Semiconductor Device Having a Drain Electrode Contacting an EPI Material Inside a Through-Hole and Method of Manufacturing the Same
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date20/3/31
    Personsminjung Kim
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