Korean Intellectual Property Office Releases Research & Business Foundation Sungkyunkwan University's Patent Application for Substrate Comprising Through Hole, Method of Fabricating Thereof and Mehtod of Fillinig the Through Hole with Electrode Material

Press/Media: Press / Media

Period2015 Aug 18

Media coverage

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Media coverage

  • TitleKorean Intellectual Property Office Releases Research & Business Foundation Sungkyunkwan University's Patent Application for Substrate Comprising Through Hole, Method of Fabricating Thereof and Mehtod of Fillinig the Through Hole with Electrode Material
    Media name/outletGlobal IP News. Electrical Patent News
    CountryIndia
    Date15/8/18
    PersonsJeong-Hoon Kim
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