Korean Intellectual Property Office Releases Research & Business Foundation Sungkyunkwan University's Patent Application for Substrate Comprising Through Hole, Method of Fabricating Thereof and Mehtod of Fillinig the Through Hole with Electrode Material

Media coverage

• Title	Korean Intellectual Property Office Releases Research & Business Foundation Sungkyunkwan University's Patent Application for Substrate Comprising Through Hole, Method of Fabricating Thereof and Mehtod of Fillinig the Through Hole with Electrode Material
  Media name/outlet	Global IP News. Electrical Patent News
  Country	India
  Date	15/8/18
  Persons	Jeong-Hoon Kim