Samsung Electronics and Seoul National University R&DB Foundation Apply for Patent on Nonvolatile Memory Device with Vertical String Including Semiconductor and Resistance Change Layers and Method of Operating the Same

Press/Media: Press / Media

Period2021 Nov 12

Media coverage

1

Media coverage

  • TitleSamsung Electronics and Seoul National University R&DB Foundation Apply for Patent on Nonvolatile Memory Device with Vertical String Including Semiconductor and Resistance Change Layers and Method of Operating the Same
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date21/11/12
    PersonsJungho Hwang