Samsung Electronics Awarded Patent for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (VFET) and Methods of Forming the Same

Press/Media: Press / Media

Period	2023 Jan 20

Media coverage

Title	Samsung Electronics Awarded Patent for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (VFET) and Methods of Forming the Same
Media name/outlet	Global IP News. Semiconductor Patent News
Country/Territory	India
Date	23/1/20
URL	ct.moreover.com/?a=49803712504&p=1gw&v=1&x=D7RE_hyiyd0JY2mkDGca1g
Persons	Hyun Jae Kim