Samsung Electronics Files United States Patent Application for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (V-FET) and Methods of Forming the Same

Press/Media: Press / Media

Period2021 Apr 15

Media coverage

1

Media coverage

  • TitleSamsung Electronics Files United States Patent Application for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (V-FET) and Methods of Forming the Same
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date21/4/15
    PersonsHyun Jae Kim
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