Samsung Electronics Granted Patent for Fin Structure for Vertical Field Effect Transistor Having Two-Dimensional Shape in Plan View

Press/Media: Press / Media

Period2022 Mar 9

Media coverage

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Media coverage

  • TitleSamsung Electronics Granted Patent for Fin Structure for Vertical Field Effect Transistor Having Two-Dimensional Shape in Plan View
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date22/3/9
    PersonsHyun Jae Kim
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