Samsung Electronics Granted Patent for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (VFET) and Methods of Forming the Same

Press/Media: Press / Media

Period2021 Aug 31

Media coverage

1

Media coverage

  • TitleSamsung Electronics Granted Patent for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (VFET) and Methods of Forming the Same
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date21/8/31
    PersonsHyun Jae Kim