Samsung Electronics Granted Patent for Methods of Fabricating FinFET Semiconductor Devices Including Dummy Structures

Press/Media: Press / Media

Period2017 May 17

Media coverage

1

Media coverage

  • TitleSamsung Electronics Granted Patent for Methods of Fabricating FinFET Semiconductor Devices Including Dummy Structures
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date17/5/17
    PersonsHyun Jae Kim