Samsung Electronics Secures Patent on Memory Device with Memory Cell Structure Including Ferroelectric Data Storage Layer and a First Gate and a Second Gate

Press/Media: Press / Media

Period2021 Jan 19

Media coverage

1

Media coverage

  • TitleSamsung Electronics Secures Patent on Memory Device with Memory Cell Structure Including Ferroelectric Data Storage Layer and a First Gate and a Second Gate
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date21/1/19
    PersonsHyun Jae Kim