United States Patent for Device for Measuring Threshold Voltage of a Transistor Based on Constant Drain Voltage and Constant Drain Source Current Issued to SK Hynix and Industry-Academic Cooperation Foundation Yonsei University

Press/Media: Press / Media

Period2018 Jun 5

Media coverage

2

Media coverage

  • TitleUnited States Patent for Device for Measuring Threshold Voltage of a Transistor Based on Constant Drain Voltage and Constant Drain Source Current Issued to SK Hynix and Industry-Academic Cooperation Foundation Yonsei University
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date18/6/5
    PersonsHyun Jae Kim, Hyun Mee Kim, Jung-Hyun Kim
  • TitleUnited States Patent for Device for Measuring Threshold Voltage of a Transistor Based on Constant Drain Voltage and Constant Drain Source Current Issued to SK Hynix and Industry-Academic Cooperation Foundation Yonsei University
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date18/6/5
    PersonsHyun Jae Kim, Hyun Mee Kim, Jung-Hyun Kim