United States Patent for Method of Formation of Tin Oxide Semiconductor Thin Film Doped with Antimony Issued to Samsung Display, Industry-Academic Cooperation Foundation Yonsei University

Press/Media: Press / Media

Period2015 Dec 30

Media coverage

1

Media coverage

  • TitleUnited States Patent for Method of Formation of Tin Oxide Semiconductor Thin Film Doped with Antimony Issued to Samsung Display, Industry-Academic Cooperation Foundation Yonsei University
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date15/12/30
    PersonsHyunsoo Kim