U.S. Patent and Trademark Office Awards Patent for Method of Manufacturing Semiconductor Substrate Including Separating Two Semiconductor Layers from a Growth Substrate

Press/Media: Press / Media

Period2018 Feb 20

Media coverage

1

Media coverage

  • TitleU.S. Patent and Trademark Office Awards Patent for Method of Manufacturing Semiconductor Substrate Including Separating Two Semiconductor Layers from a Growth Substrate
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date18/2/20
    PersonsHyun Jae Kim