U.S. Patent and Trademark Office Awards Patent for Semiconductor Device Having a Drift Region with Non-Uniform Impurity Concentration Profile

Press/Media: Press / Media

Period2018 Sep 25

Media coverage

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Media coverage

  • TitleU.S. Patent and Trademark Office Awards Patent for Semiconductor Device Having a Drift Region with Non-Uniform Impurity Concentration Profile
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date18/9/25
    PersonsHyun Jae Kim
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