U.S. Patent and Trademark Office Publishes Samsung Electronics's Patent Application for Fin Structure for Vertical Field Effect Transistor Having Two-Dimensional Shape in Plan View

Press/Media: Press / Media

Period2020 Dec 27

Media coverage

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  • TitleU.S. Patent and Trademark Office Publishes Samsung Electronics's Patent Application for Fin Structure for Vertical Field Effect Transistor Having Two-Dimensional Shape in Plan View
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date20/12/27
    PersonsHyun Jae Kim
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