U.S. Patent and Trademark Office Receives Samsung Electronics's Patent Application for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (VFET) and Methods of Forming the Same

Press/Media: Press / Media

Period2021 Dec 3

Media coverage

1

Media coverage

  • TitleU.S. Patent and Trademark Office Receives Samsung Electronics's Patent Application for Integrated Circuit Devices Including a Vertical Field-Effect Transistor (VFET) and Methods of Forming the Same
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date21/12/3
    PersonsHyun Jae Kim