U.S. Patent and Trademark Office Releases Samsung Electronics's Patent Application for Method of Forming a Nitride Semiconductor Substrate

Press/Media: Press / Media

Period2018 Jun 14

Media coverage

1

Media coverage

  • TitleU.S. Patent and Trademark Office Releases Samsung Electronics's Patent Application for Method of Forming a Nitride Semiconductor Substrate
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date18/6/14
    PersonsHyun Jae Kim