US Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY on Nov. 26 for "Flexible high performance inorganic matter FET using built-in strain of inorganic matter on insulator wafer" (South Korean Inventors)

Press/Media: Press / Media

Period2019 Nov 27

Media coverage

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Media coverage

  • TitleUS Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY on Nov. 26 for "Flexible high performance inorganic matter FET using built-in strain of inorganic matter on insulator wafer" (South Korean Inventors)
    Media name/outletUS Fed News
    CountryUnited States
    Date19/11/27
    PersonsJong-Hyun Ahn, Hyun Seo Ahn