US Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY on April 19 for "Vertical Schottky barrier diodes using two-dimensional layered semiconductors and fabrication methods thereof" (South Korean Inventors)

Press/Media: Press / Media

Period2022 Apr 20

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Media coverage

  • TitleUS Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY on April 19 for "Vertical Schottky barrier diodes using two-dimensional layered semiconductors and fabrication methods thereof" (South Korean Inventors)
    Media name/outletUS Fed News
    Country/TerritoryUnited States
    Date22/4/20
    PersonsSeongil Im
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