US Patent Issued to SAMSUNG ELECTRONICS on Jan. 19 for "Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate" (South Korean Inventors)

Press/Media: Press / Media

Period2021 Jan 20

Media coverage

1

Media coverage

  • TitleUS Patent Issued to SAMSUNG ELECTRONICS on Jan. 19 for "Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate" (South Korean Inventors)
    Media name/outletUS Fed News
    CountryUnited States
    Date21/1/20
    PersonsHyun Jae Kim