US Patent Issued to SAMSUNG ELECTRONICS on Jan. 5 for "Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer pattern" (South Korean Inventors)

Press/Media: Press / Media

Period2021 Jan 6

Media coverage

1

Media coverage

  • TitleUS Patent Issued to SAMSUNG ELECTRONICS on Jan. 5 for "Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer pattern" (South Korean Inventors)
    Media name/outletUS Fed News
    CountryUnited States
    Date21/1/6
    PersonsHyun Jae Kim