US Patent Issued to UIF (University Industry Foundation), Yonsei University on Aug. 23 for "Light emitting diode integrated with transition metal dichalcogenide transistor and method for manufacturing the same" (South Korean Inventors)

Press/Media: Press / Media

Period2022 Aug 24

Media coverage

1

Media coverage

  • TitleUS Patent Issued to UIF (University Industry Foundation), Yonsei University on Aug. 23 for "Light emitting diode integrated with transition metal dichalcogenide transistor and method for manufacturing the same" (South Korean Inventors)
    Media name/outletUS Fed News
    Country/TerritoryUnited States
    Date22/8/24
    PersonsJong-Hyun Ahn, Hyun Seo Ahn