Research Output per year
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Profiles
Research Output
2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications
Kim, T., Kang, D., Lee, Y., Hong, S., Shin, H. G., Bae, H., Yi, Y., Kim, K. & Im, S., 2020, (Accepted/In press) In : Advanced Functional Materials.Research output: Contribution to journal › Article
AdS Q-soliton and inhomogeneously mass-deformed ABJM model
Ahn, B., Hyun, S., Kim, K. K., Kwon, O. K. & Park, S. A., 2020 Feb 1, In : Journal of High Energy Physics. 2020, 2, 132.Research output: Contribution to journal › Article
Open Access
1
Citation
(Scopus)
Anisotropic and nonlinear magnetodielectric effects in orthoferrite ErFeO3 single crystals
Oh, D. G., Kim, J. H., Shin, H. J., Choi, Y. J. & Lee, N., 2020 Dec 1, In : Scientific reports. 10, 1, 11825.Research output: Contribution to journal › Article
Open Access
Press / Media
US Patent Issued to SAMSUNG ELECTRONICS, Industry-Academic Cooperation Foundation, Yonsei University on Sept. 15 for "Method of manufacturing a semiconductor device using the same" (South Korean Inventors)
20/9/15
1 item of Media coverage
Press/Media: Press / Media
Laser technique authenticates whiskey without cracking the seal
20/9/10
1 item of Media coverage
Press/Media: Press / Media