• 2639 Citations
  • 26 h-Index
1990 …2020

Research output per year

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Research Output

2020

Demonstration of solar cell on a graphite sheet with carbon diffusion barrier evaluation

Cho, H., Kim, J., Park, S., Kim, S., Kim, H., Oh, H. J. & Ko, D. H., 2020 Feb 12, In : Molecules. 25, 4, 785.

Research output: Contribution to journalArticle

Open Access

Dopant Activation of In Situ Phosphorus-Doped Silicon Using Multi-Pulse Nanosecond Laser Annealing

Shin, H., Lee, M., Ko, E., Ryu, H. Y., Park, S., Kim, E. & Ko, D. H., 2020 Jun 1, In : Physica Status Solidi (A) Applications and Materials Science. 217, 12, 1900988.

Research output: Contribution to journalArticle

Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si1-xGex

Lee, H. W., Choi, Y., Shin, D., Byeon, D. S. & Ko, D. H., 2020 Aug 1, In : Thin Solid Films. 707, 138048.

Research output: Contribution to journalArticle

Facet evolution of selectively grown epitaxial Si1− xGex fin layers in sub-100 nm trench arrays

Jang, H., Koo, S., Byeon, D. S., Choi, Y. & Ko, D. H., 2020 Feb 15, In : Journal of Crystal Growth. 532, 125429.

Research output: Contribution to journalArticle

Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement

Kim, J., Jeong, K., Baik, M., Kim, D. K., Chae, J., Park, H., Hong, S. B., Ko, D. H. & Cho, M. H., 2020 May 30, In : Applied Surface Science. 513, 145815.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Quasicrystalline phase-change memory

Lee, E. S., Yoo, J. E., Yoon, D. S., Kim, S. D., Kim, Y., Hwang, S., Kim, D., Jeong, H. C., Kim, W. T., Chang, H. J., Suh, H., Ko, D. H., Cho, C., Choi, Y., Kim, D. H. & Cho, M. H., 2020 Dec 1, In : Scientific reports. 10, 1, 13673.

Research output: Contribution to journalArticle

Open Access

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Shin, H., Lee, J., Lee, M., Ryu, H. Y., Park, S., Park, H. & Ko, D. H., 2020 Apr 1, In : Japanese journal of applied physics. 59, SG, SGGK09.

Research output: Contribution to journalArticle

Selective chemical wet etching of Si1-xGex versus Si in single-layer and multi-layer with HNO3/HF mixtures

Choi, Y., Jang, H., Byun, D. S. & Ko, D. H., 2020 Sep 1, In : Thin Solid Films. 709, 138230.

Research output: Contribution to journalArticle

Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): A theoretical study

Lee, M., Lee, K. & Ko, D. H., 2020 Jun, In : Semiconductor Science and Technology. 35, 6, 065004.

Research output: Contribution to journalArticle

2019

Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping

Jang, H., Kim, B., Koo, S., Choi, Y., Shin, C. S. & Ko, D. H., 2019 Mar 1, In : Japanese journal of applied physics. 58, 3, 036502.

Research output: Contribution to journalArticle

Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films

Park, S., Shin, H., Ko, E. & Ko, D. H., 2019 May 22, In : Physica Status Solidi (A) Applications and Materials Science. 216, 10, 1800620.

Research output: Contribution to journalArticle

Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition

Shin, D., Song, H., Jeong, J. E., Park, H. & Ko, D. H., 2019 Mar 1, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 37, 2, 020902.

Research output: Contribution to journalArticle

Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers

Kim, S. W., Lee, M., Jang, H., Lee, H. J. & Ko, D. H., 2019 Jun 25, In : Journal of Alloys and Compounds. 790, p. 799-808 10 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

Song, H., Shin, D., Jeong, J. E., Park, H. & Ko, D. H., 2019 Mar 1, In : AIP Advances. 9, 3, 035333.

Research output: Contribution to journalArticle

Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V-1 • s-1

Lee, I. G., Jo, H. B., Yun, D. Y., Shin, C. S., Lee, J. H., Kim, T. W., Ko, D. H. & Kim, D. H., 2019 Jun 1, In : Applied Physics Express. 12, 6, 064003.

Research output: Contribution to journalArticle

Open Access
1 Citation (Scopus)

Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications

Kim, J. H., Park, J. H. & Ko, D. H., 2019 Dec 1, In : Journal of Materials Science: Materials in Electronics. 30, 23, p. 20751-20757 7 p.

Research output: Contribution to journalArticle

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Shim, J., Jang, S. W., Lim, J. H., Kim, H., Kang, D. H., Kim, K. H., Seo, S., Heo, K., Shin, C., Yu, H. Y., Lee, S., Ko, D. H. & Park, J. H., 2019 Jul 21, In : Nanoscale. 11, 27, p. 12871-12877 7 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma

Park, S., Kim, K. D., Oh, H. J. & Ko, D. H., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 348-350 3 p. 8731213. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

Lee, M., Kim, S. & Ko, D. H., 2018 Jun 15, In : Applied Surface Science. 443, p. 131-137 7 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

Kim, J. H., Park, J. H. & Ko, D. H., 2018 May 1, In : Thin Solid Films. 653, p. 173-178 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Physical and electrical characteristics of GexSb100−x films for use as phase-change materials

Kim, J. H., Byeon, D. S., Ko, D. H. & Park, J. H., 2018 Aug 1, In : Thin Solid Films. 659, p. 1-6 6 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor

Shin, D., Song, H., Lee, M., Park, H. & Ko, D. H., 2018 Aug 30, In : Thin Solid Films. 660, p. 572-577 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2017

Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation

Jang, H., Kim, B., Koo, S., Park, S. & Ko, D. H., 2017 Nov 1, In : Journal of the Korean Physical Society. 71, 10, p. 701-706 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Comparison of the optimum number of quantum wells in GaN-based blue light-emitting diodes grown on sapphire and Si(111) substrates

Jeon, K. S., Yuh, H. K., Choi, Y. H., Lee, J. S., Ko, D. H. & Ryu, H. Y., 2017, In : Journal of Nanoscience and Nanotechnology. 17, 6, p. 4235-4238 4 p.

Research output: Contribution to journalArticle

Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films

Lee, M., Kim, S. W., Ko, E., Jang, H., Koo, S. & Ko, D. H., 2017, In : Journal of Nanoscience and Nanotechnology. 17, 5, p. 3365-3369 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2 Citations (Scopus)

Erratum to: Branch length similarity entropy-based descriptors for shape representation (Journal of the Korean Physical Society, (2017), 71, 10, (727-732), 10.3938/jkps.71.593)

Shin, D. H., Heo, J. H., Im, S. H., Lee, R., Kim, K., Cho, S., Lim, S., Lee, S., Shim, J. B., Huh, H. D., Lee, S. H., Ahn, S., Nobi, A., Lee, J. W., Lim, H., Lee, H., Cho, H., Seo, C., Je, U., Park, C. & 67 others, Kim, K., Kim, G., Park, S., Lee, D., Kang, S., Lee, M., Cao, J., Zhao, X., Li, Z., Liu, W., Gu, H., Kang, I. H., Na, M. K., Seok, O., Moon, J. H., Kim, H. W., Kim, S. C., Bahng, W., Kim, N. K., Park, H. C., Yang, C. H., Kim, K., Kim, Y., Lee, K. S., Hong, Y. S., Cho, C. H., Sung, H. K., Hyun, J. W., Kim, G. B., Lee, J. H., Kim, Y. J., Hwang, S., Jeong, J., Cho, S., Lee, J., Yu, T. J., Lee, K. I., Lee, G. J., Park, G., Choi, E. H., Kim, D. H., Jeong, J. S., Eom, S. K., Lee, J. G., Seo, K. S., Cha, H. Y., Ko, Y. J., Kim, H. S., Jung, J. H., Jeong, I., Song, H., Lee, B. C., Jang, H., Kim, B., Koo, S., Park, S., Ko, D. H., Ahn, K. J., Cho, S., Kim, S. G., Hong, K., Shim, S. B., Jo, M., Cho, S. U., Park, Y. D., Kim, H. C. & Kim, S., 2017 Dec 1, In : Journal of the Korean Physical Society. 71, 12, p. 1075 1 p.

Research output: Contribution to journalComment/debate

1 Citation (Scopus)

Formation of a Ge-rich Si1-xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation

Jang, H., Kim, B., Koo, S. & Ko, D. H., 2017 Sep 29, In : Semiconductor Science and Technology. 32, 11, 114001.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2 Citations (Scopus)

Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films

Lee, M., Ko, E. & Ko, D. H., 2017, In : Journal of Materials Chemistry C. 5, 37, p. 9744-9752 9 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Scalable CGeSbTe-based phase change memory devices employing U-shaped cells

Park, J. H., Kim, J. H., Ko, D. H., Wu, Z., Ahn, D. H., Park, S. O. & Hwang, K. H., 2017 Jul 31, In : Thin Solid Films. 634, p. 141-146 6 p.

Research output: Contribution to journalArticle

Se-doped Ge10Sb90 for highly reliable phase-change memory with low operation power

Kim, J. H., Byeon, D. S., Ko, D. H. & Park, J. H., 2017 Jul 14, In : Journal of Materials Research. 32, 13, p. 2449-2455 7 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor

Cho, Y. D., Lee, I. G., Jung, M. J., Shin, H., Jun, D. H., Shin, C. S., Park, K. H., Park, W. K., Kim, D. H. & Ko, D. H., 2017, In : Journal of Nanoscience and Nanotechnology. 17, 5, p. 3242-3246 5 p.

Research output: Contribution to journalArticle

Selective epitaxial growth properties and strain characterization of Si1−xGex in SiO2 trench arrays

Koo, S., Jang, H. & Ko, D. H., 2017 Apr 1, In : Journal of the Korean Physical Society. 70, 7, p. 714-719 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

Kim, G., Park, S., Shin, H., Song, S., Oh, H. J., Ko, D. H., Choi, J. I. & Baik, S. J., 2017 Dec 1, In : AIP Advances. 7, 12, 125310.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2016

A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates

Jeon, K. S., Sung, J. H., Lee, M. W., Song, H. Y., Shin, H. Y., Park, W. H., Jang, Y. I., Kang, M. G., Choi, Y. H., Lee, J. S., Ko, D. H. & Ryu, H. Y., 2016 Feb 1, In : Journal of Nanoscience and Nanotechnology. 16, 2, p. 1798-1801 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2 Citations (Scopus)

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

Park, J. H., Kim, S. W., Kim, J. H., Ko, D. H., Wu, Z., Ahn, D., Ahn, D. H., Lee, J. M., Kang, S. B. & Choi, S. Y., 2016 Feb 1, In : AIP Advances. 6, 2, 025013.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Choi, S., Kim, J., Choi, J., Cho, S., Lee, M., Ko, E., Rho, I. C., Kim, C. H., Kim, Y., Ko, D. H. & Kim, H., 2016 Nov 1, In : Microelectronic Engineering. 165, p. 1-5 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Phase change memory employing a Ti diffusion barrier for reducing reset current

Park, J. H., Kim, S. W., Kim, J. H., Ko, D. H., Wu, Z., Ahn, J. K., Ahn, D. H., Lee, J. M., Kang, S. B. & Choi, S. Y., 2016 Aug 1, In : Thin Solid Films. 612, p. 135-140 6 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shin, W. G., Kim, K. D., Park, J. G. & Ko, D. H., 2016 May, In : Journal of Nanoscience and Nanotechnology. 16, 5, p. 4808-4813 6 p.

Research output: Contribution to journalArticle

Process to form V-grooved trenches on patterned Si (001) substrates using in situ selective area etching in a MOCVD reactor

Cho, Y. D., Lee, I. G., Lee, J. H., Kim, S. W., Shin, C. S., Park, W. K., Kim, C. Y., Kim, D. H. & Ko, D. H., 2016, In : ECS Journal of Solid State Science and Technology. 5, 7, p. P409-P411

Research output: Contribution to journalArticle

1 Citation (Scopus)

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Koo, S., Jang, H., Kim, S. W. & Ko, D. H., 2016 Sep 1, In : AIP Advances. 6, 9, 095114.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

Cho, Y. D., Lee, I. G., Kim, S. W., Jun, D. H., Choi, I. H., Kwon, H. M., Shin, C. S., Park, K. H., Park, W. K., Kim, D. H. & Ko, D. H., 2016 May, In : Journal of Nanoscience and Nanotechnology. 16, 5, p. 5168-5172 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices

Park, J. H., Kim, J. H., Ko, D. H., Wu, Z., Ahn, D. H., Park, S. O. & Hwang, K. H., 2016 Oct 1, In : Thin Solid Films. 616, p. 502-506 5 p.

Research output: Contribution to journalArticle

2015

Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO2 trench arrays

Kim, B., Jang, H., Koo, S., Kim, J. H., Kim, D. H., Min, B. G., Song, J. S. & Ko, D. H., 2015 Apr 1, In : Thin Solid Films. 580, p. 45-51 7 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)