• 2639 Citations
  • 26 h-Index
1990 …2020

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2019

SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma

Park, S., Kim, K. D., Oh, H. J. & Ko, D. H., 2019 Mar 1, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 348-350 3 p. 8731213. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

HfO2 gate stack engineering by post-gate cleaning using NF3/NH3 plasma

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shinc, W. G., Kang, S. Y. & Ko, D. H., 2015 Jan 1, Plasma Processing 20. Mathad, S., Hess, D. W., Leonte, O. M. & Engelhardt, M. (eds.). 39 ed. Electrochemical Society Inc., p. 11-16 6 p. (ECS Transactions; vol. 64, no. 39).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High-performance III-V devices for future logic applications

Kim, D. H., Kim, T. W., Baek, R., Kirsch, P. D., Maszara, W., Del Alamo, J. A., Antoniadis, D. A., Urteaga, M., Brar, B., Kwon, H., Shin, C. S., Park, W. K., Cho, Y. D., Shin, S., Ko, D. & Seo, K. S., 2015 Feb 20, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., p. 25.2.1-25.2.4 7047105. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2015-February, no. February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shin, W. G., Kang, S. Y. & Ko, D. H., 2015, Ultra Clean Processing of Semiconductor Surfaces XII. Mertens, P. W., Meuris, M., Heyns, M., Meuris, M. & Heyns, M. (eds.). Trans Tech Publications Ltd, p. 11-15 5 p. (Solid State Phenomena; vol. 219).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

Kim, B., Jang, H., Byeon, D. S., Koo, S. & Ko, D. H., 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 77-78 2 p. 6874662. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

Shin, C. S., Park, W. K., Shin, S., Cho, Y., Ko, D., Kim, T. W., Koh, D. H., Kwon, H., Hill, R. J. W., Kirsch, P., Maszara, W. & Kim, D. H., 2014 Sep 8, Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 6894351. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2013

Comprehensive layout and process optimization study of Si and III-V technology for sub-7nm node

Kang, C. Y., Baek, R. H., Kim, T. W., Ko, D., Kim, D. H., Michalak, T., Borst, C., Veksler, D., Bersuker, G., Hill, R., Hobbs, C. & Kirsch, P. D., 2013, 2013 IEEE International Electron Devices Meeting, IEDM 2013. p. 5.3.1-5.3.4 6724566. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

Kim, T. W., Kim, D. H., Koh, D. H., Kwon, H. M., Baek, R. H., Veksler, D., Huffman, C., Matthews, K., Oktyabrsky, S., Greene, A., Ohsawa, Y., Ko, A., Nakajima, H., Takahashi, M., Nishizuka, T., Ohtake, H., Banerjee, S. K., Shin, S. H., Ko, D. H., Kang, C. & 5 others, Gilmer, D., Hill, R. J. W., Maszara, W., Hobbs, C. & Kirsch, P. D., 2013, 2013 IEEE International Electron Devices Meeting, IEDM 2013. p. 16.3.1-16.3.4 6724641. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)
2012

Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors

Kim, S. W., Byeon, D. S., Jung, M., Ko, D. H., Chopra, S., Kim, Y. & Lee, H. J., 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 801-805 5 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Strain evolution of Si1-xGex selective epitaxial growth in steps

Koo, S., Kim, S. W. & Ko, D. H., 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 551-555 5 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The effect of gate length on channel strain of recessed source/drain Si 1-xC x

Ko, D. H., Kim, S. W., Byeon, D. S., Koo, S., Jung, M., Chopra, S., Kim, Y. & Lee, H. J., 2012, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. p. 160-161 2 p. 6222509. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x

Ko, D. H., Kim, S. W., Koo, S., Jung, M. & Lee, H. J., 2012, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. p. 162-163 2 p. 6222510. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures

Kim, S. W., Yoo, J. H., Koo, S. M., Ko, D. H. & Lee, H. J., 2011, ULSI Process Integration 7. 7 ed. p. 175-180 6 p. (ECS Transactions; vol. 41, no. 7).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems

Cho, Y. D., Suh, D. C., Ko, D. H., Lee, Y. & Cho, M. H., 2011, Physics and Technology of High-k Materials 9. 3 ed. p. 145-148 4 p. (ECS Transactions; vol. 41, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Investigation of process parameters on the properties of selective epitaxial growth SiGe structure

Kim, S. W., Yoo, J. H., Koo, S. M. & Ko, D. H., 2010, SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. p. 171-179 9 p. (ECS Transactions; vol. 33, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces

Cho, Y. D., Suh, D. C., Lee, Y., Ko, D. H., Chung, K. B. & Cho, M. H., 2010, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. p. 311-314 4 p. (ECS Transactions; vol. 28, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain

Oh, J., Lee, S. H., Min, K. S., Huang, J., Min, B. G., Sassman, B., Jeon, K., Loh, W. Y., Barnett, J., Ok, I., Kang, C. Y., Smith, C., Ko, D. H., Kirsch, P. D. & Jammy, R., 2010, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 39-40 2 p. 5556127. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)
2009

The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs (100) surfaces

Suh, D. C., Cho, Y. D., Ko, D. H., Chung, K. B., Cho, M. H. & Lee, Y., 2009, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment. 1 ed. p. 233-239 7 p. (ECS Transactions; vol. 19, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2008

Comparison of growth rate at oxidation of Si1-xGex nanowires

Kim, S. Y., Chang, H. J., Seong, H. K., Choi, H. J. & Ko, D. H., 2008, ECS Transactions - Nanotechnology (General) - 213th ECS Meeting. 18 ed. p. 7-12 6 p. (ECS Transactions; vol. 13, no. 18).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx

Yoo, J. H., Chang, H. J., Cho, M. H., Lee, T. W. & Ko, D. H., 2008, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 427-432 6 p. (ECS Transactions; vol. 13, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The study of hafnium silicate by various nitrogen gas annealing treatment

Dong, C. S., Kwun, B. C., Cho, M. H., Young, D. C. & Ko, D. H., 2008, Materials Science of High-K Dielectric Stacks - From Fundamentals to Technology. p. 68-72 5 p. (Materials Research Society Symposium Proceedings; vol. 1073).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The study of workfunction measurement method for bilayer metal gate electrode using XPS

Jung, E. J., Yim, C. J., Yang, I. S., Chang, H. J., Cho, S. W., Cho, M. H. & Ko, D. H., 2008, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 187-191 5 p. (ECS Transactions; vol. 13, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2007

Relaxation of strained Si1-xGexby dry oxidation

Min, B. G., Ko, D. H., Cho, M. H., Lee, T. W. & Choi, K. J., 2007, ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. p. 41-52 12 p. (ECS Transactions; vol. 6, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The study of hafnium silicate by NO gas annealing treatment

Suh, D. C., Lee, D., Chung, K. B., Cho, M. H. & Ko, D. H., 2007, ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. p. 129-139 11 p. (ECS Transactions; vol. 6, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1999

New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology

Ku, J. H., Kim, C. S., Choi, C. J., Fujihara, K., Kang, H. K., Lee, M. Y., Chung, J. H., Lee, E. J., Lee, J. E. & Ko, D. H., 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc., p. 256-258 3 p. 787137. (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
1993

Effect of surface iron on gate oxide integrity and its removal from silicon surfaces

Park, H., Helms, C. R., Ko, D., Tran, M. & Triplett, B. B., 1993, Surface Chemical Cleaning and Passivation for Semiconductor Processing. Higashi, G. S., Irene, E. A. & Ohmi, T. (eds.). Publ by Materials Research Society, p. 353-358 6 p. (Materials Research Society Symposium Proceedings; vol. 315).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
1991

Low-temperature reactions at metal-semiconductor interfaces

Sinclair, R., Konno, T., Ko, D. H. & Ogawa, S., 1991, Institute of Physics Conference Series. 117 ed. Publ by Inst of Physics Publ Ltd, p. 283-287 5 p. (Institute of Physics Conference Series; no. 117).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)