• 1796 Citations
  • 23 h-Index
1993 …2020

Research output per year

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Research Output

  • 1796 Citations
  • 23 h-Index
  • 113 Article
  • 14 Conference contribution
  • 12 Conference article
  • 2 Paper
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Conference contribution
2012

Effect of W doping on bipolar resistive switching behavior of TiN/W:NbO x/Pt device

Lee, K., Kim, J., Lee, S., Park, S. & Sohn, H., 2012 Oct 1, 2012 IEEE International Interconnect Technology Conference, IITC 2012. 6251647. (2012 IEEE International Interconnect Technology Conference, IITC 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode

Kim, J., Mok, I. S., Lee, S., Lee, K. & Sohn, H., 2012 Oct 1, 2012 IEEE International Interconnect Technology Conference, IITC 2012. 6251589. (2012 IEEE International Interconnect Technology Conference, IITC 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Effect of oxygen diffusion into TiN on resistance switching characteristics of ZrO2 films with annealing temperatures

Kim, J., Lee, S., Na, H., Lee, K. & Sohn, H., 2011 Aug 30, 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 5940347. (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Integrated phase-change memory devices using Bi2Te3 nanowires

Han, N., Kim, S. I., Yang, J. D., Lee, K., Sohn, H., So, H. M., Ahn, C. W. & Yoo, K. H., 2011 Nov 23, Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. p. 126-128 3 p. (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2007

BEOL process integrations with Cu/FSG wiring at 90 nm design-rule DDR DRAM and their effects on yield, refresh time, and wafer-level reliability

Kwak, N., Ahn, S. T., Park, H. S., Kim, S. M., Jung, J. K., Kim, G. H., Choi, G. Y., Koo, D. C., Jung, T. O., Ku, J. C., Jung, J. K., Kim, J., Park, S., Sohn, H. & Kim, S. H., 2007, Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. IEEE Computer Society, p. 150-152 3 p. 4263679. (Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)
2006

Development of new TiN/ZrO2/Al2O3/ZrO 2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics

Kil, D. S., Song, H. S., Lee, K. J., Hong, K., Kim, J. H., Park, K. S., Yeom, S. J., Roh, J. S., Kwak, N. J., Sohn, H. C., Kim, J. W. & Park, S. W., 2006 Dec 1, 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. p. 38-39 2 p. 1705205. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

59 Citations (Scopus)

Highly reliable and scalable tungsten polymetal gate process for memory devices using low-temperature plasma selective gate reoxidation

Lim, K. Y., Sung, M. G., Cho, H. J., Kim, Y. S., Jang, S. A., Oh, J. G., Lee, S. R., Kim, K., Lee, P. S., Chun, Y. S., Yang, H. S., Kwak, N. J., Sohn, H. C., Kim, J. W. & Park, S. W., 2006 Dec 1, 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. p. 74-75 2 p. 1705223. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Highly Scalable Saddle-Fin(S-Fin) transistor for sub-50nm DRAM technology

Chung, S. W., Lee, S. D., Jang, S. A., Yoo, M. S., Kim, K. O., Chung, C. O., Cho, S. Y., Cho, H. J., Lee, L. H., Hwang, S. H., Kim, J. S., Lee, B. H., Yoon, H. G., Park, H. S., Baek, S. J., Cho, Y. S., Kwak, N. J., Sohn, H. C., Moon, S. C., Yoo, K. D. & 4 others, Jeong, J. G., Kim, J. W., Hong, S. J. & Park, S. W., 2006, 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. 32-33 2 p. 1705202. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)

Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance

Sung, M. G., Lim, K. Y., Cho, H. J., Lee, S. R., Jang, S. A., Yang, H. S., Kim, K., Kwak, N. J., Sohn, H. C. & Kim, J. W., 2006 Dec 1, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 374-378 5 p. 4017187. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)
2005

Investigation on the compositionally graded HfxAl yOz films for TiN based DRAM capacitor

Kil, D. S., Hong, K., Yeom, S. J., Song, H. S., Park, K. S., Roh, J. S., Kwak, N. J., Sohn, H. C., Kim, J. W. & Park, S. W., 2005 Dec 1, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. p. 371-374 4 p. 1546662. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Reliability of MIM HAO capacitor for 70NM DRAM

Hong, K., Kil, D. S., Woo, H. K., Kim, J., Song, H. S., Park, K. S., Yeom, S. J., Yang, H. S., Roh, J. S., Sohn, H. C., Kim, J. W. & Park, S. W., 2005 Dec 15, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. p. 686-687 2 p. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2004

A novel method for forming gate spacer and its effects on the W/WN x/Poly-si gate stack

Kim, Y. S., Lim, K. Y., Oh, J. G., Jang, S. A., Cho, H. J., Yang, J. M., Suh, J. B., Chung, S. O., Park, S. Y., Yang, H. S., Sohn, H. C. & Kim, J. W., 2004 Dec 1, ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference. Mertens, R. P. & Claeys, C. L. (eds.). p. 97-100 4 p. (ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
1994

Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer

Weber, Z. L., Fujioka, H., Sohn, H. & Weber, E. R., 1994 Jan 1, Materials Research Society Symposium Proceedings. Publ by Materials Research Society, p. 377-382 6 p. (Materials Research Society Symposium Proceedings; vol. 325).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
1993

Defects in GaAs bulk crystals and multi-layers caused by in diffusion

Werner, P., Liliental-Weber, Z., Sohn, H., Yau, W. F., Baranowski, J. & Weber, E. R., 1993 Jan 1, Materials Research Society Symposium Proceedings. Rodbell, K. P., Filter, W. F., Frost, H. J. & Ho, P. S. (eds.). Publ by Materials Research Society, p. 487-491 5 p. (Materials Research Society Symposium Proceedings; vol. 309).

Research output: Chapter in Book/Report/Conference proceedingConference contribution