• 1738 Citations
  • 22 h-Index
1993 …2019
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Research Output 1993 2019

  • 1738 Citations
  • 22 h-Index
  • 110 Article
  • 14 Conference contribution
  • 12 Conference article
  • 2 Paper
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Article
2019

Effect of process parameters on the angular distribution of sputtered Cu flux in long-throw sputtering system

Shin, H. Y., Kim, T. H., Park, J. W. & Sohn, H. C., 2019 Jan 1, In : Journal of Korean Institute of Metals and Materials. 57, 7, p. 462-467 6 p.

Research output: Contribution to journalArticle

Open Access
Sputtering
Angular distribution
Process Parameters
Fluxes
Substrate

Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering

Lee, D., Kim, T. & Sohn, H., 2019 Jan 1, In : Applied Physics Express. 12, 8, 085504.

Research output: Contribution to journalArticle

Open Access
Amorphous films
Sputtering
sputtering
thresholds
Data storage equipment
1 Citation (Scopus)

Ovonic threshold switching in polycrystalline zinc telluride thin films deposited by RF sputtering

Kim, T., Kim, Y., Lee, I., Lee, D. & Sohn, H., 2019 Feb 5, In : Nanotechnology. 30, 13, 13LT01.

Research output: Contribution to journalArticle

Sputtering
Zinc
Thin films
Energy gap
Data storage equipment
2018
Image sensors
Oxygen
Defects
Electric potential
Gases
roughness
vapor deposition
surface roughness
flow velocity
surface defects
2017
Crystallization
Amorphous silicon
amorphous silicon
Seed
solid phases
1 Citation (Scopus)

Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks

Na, H., Jeong, J., Lee, J., Shin, H., Lee, S. & Sohn, H., 2017 Oct 1, In : Current Applied Physics. 17, 10, p. 1361-1366 6 p.

Research output: Contribution to journalArticle

Oxides
traps
Annealing
Crystals
annealing
1 Citation (Scopus)
Epitaxial layers
Ultrahigh vacuum
ultrahigh vacuum
Chemical vapor deposition
Surface roughness
2016
1 Citation (Scopus)
Charge trapping
Oxides
Data storage equipment
Computer programming
Electric fields
2015
2 Citations (Scopus)

Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

Chae, E., Lee, K., Lee, H., Ko, D. H., Jeong, H. & Sohn, H., 2015 Sep 30, In : Thin Solid Films. 591, p. 137-142 6 p.

Research output: Contribution to journalArticle

very high frequencies
Silicon
Plasma enhanced chemical vapor deposition
silicon films
carbon fibers
Hafnium oxides
hafnium oxides
Oxide films
oxide films
Impurities
10 Citations (Scopus)

Emulation of spike-timing dependent plasticity in nano-scale phase change memory

Kang, D. H., Jun, H. G., Ryoo, K. C., Jeong, H. & Sohn, H., 2015 May 1, In : Neurocomputing. 155, p. 153-158 6 p.

Research output: Contribution to journalArticle

Phase change memory
Pulse code modulation
Synapses
Plasticity
Aptitude
2014
3 Citations (Scopus)

Effect of crystallinity on the resistive switching behavior of HfAlOx films

Mok, I. S., Kim, J., Lee, K., Kim, Y., Sohn, H. & Kim, H., 2014 Feb 1, In : Journal of the Korean Physical Society. 64, 3, p. 419-423 5 p.

Research output: Contribution to journalArticle

crystallinity
leakage
grain boundaries
transmission electron microscopy
microstructure
23 Citations (Scopus)

Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

Kang, T. S., Kim, T. Y., Lee, G. M., Sohn, H. C. & Hong, J. P., 2014 Feb 28, In : Journal of Materials Chemistry C. 2, 8, p. 1390-1395 6 p.

Research output: Contribution to journalArticle

Zinc Oxide
Thin film transistors
Zinc oxide
Oxide films
Evaporation
5 Citations (Scopus)

RESET-first unipolar resistance switching behavior in annealed Nb 2O5 films

Lee, K., Kim, J., Mok, I. S., Na, H., Ko, D. H., Sohn, H., Lee, S. & Sinclair, R., 2014 May 2, In : Thin Solid Films. 558, p. 423-429 7 p.

Research output: Contribution to journalArticle

annealing
Annealing
Crystal structure
crystal structure
Rapid thermal annealing
1 Citation (Scopus)
crystallinity
sputtering
aluminum
oxygen
metals
2013
2 Citations (Scopus)

Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash

Oh, J., Na, H., Park, S. & Sohn, H., 2013 Sep 1, In : Journal of Nanoscience and Nanotechnology. 13, 9, p. 6413-6415 3 p.

Research output: Contribution to journalArticle

Flash memory
flash
tunnels
Silicates
Tunnels
3 Citations (Scopus)
insulators
Oxygen
Physical properties
Ions
high resistance
2 Citations (Scopus)

Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Na, H., Oh, J., Lee, K., Kim, J., Lee, S., Lim, D. H., Cho, M. H. & Sohn, H., 2013 May 27, In : Microelectronic Engineering. 110, p. 6-11 6 p.

Research output: Contribution to journalArticle

Polysilicon
tunnels
Tunnels
traps
endurance
16 Citations (Scopus)

Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Kim, J., Lee, K., Kim, Y., Na, H., Ko, D. H., Sohn, H. & Lee, S., 2013 Nov 15, In : Materials Chemistry and Physics. 142, 2-3, p. 608-613 6 p.

Research output: Contribution to journalArticle

Annealing
annealing
high resistance
low resistance
Electrodes
2 Citations (Scopus)
Silicon oxides
silicon oxides
tunnels
Tunnels
Data storage equipment
2 Citations (Scopus)

RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

Kim, J., Lee, S., Lee, K., Na, H., Mok, I. S., Kim, Y., Ko, D. H. & Sohn, H., 2013 Jul 4, In : Microelectronic Engineering. 112, p. 46-51 6 p.

Research output: Contribution to journalArticle

Redox reactions
Annealing
Oxygen
oxygen ions
annealing
2012
10 Citations (Scopus)

Anisotropic mobility of small molecule-polymer blend channel in organic transistor: Characterization of channel materials and orientation

Hoon Park, J., Lim, H., Cheong, H., Min Lee, K., Chul Sohn, H., Lee, G. & Im, S., 2012 Jul, In : Organic Electronics. 13, 7, p. 1250-1254 5 p.

Research output: Contribution to journalArticle

polymer blends
Thin film transistors
Polymer blends
Polymethyl methacrylates
Transistors
2 Citations (Scopus)

Change of resistive-switching in TiO 2 films with additional HfO 2 thin layer

Lee, D., Sung, Y., Sohn, H., Ko, D. H. & Cho, M. H., 2012 May 1, In : Journal of the Korean Physical Society. 60, 9, p. 1313-1316 4 p.

Research output: Contribution to journalArticle

high resistance
random access memory
electric potential
margins
heat treatment
1 Citation (Scopus)

Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress

Kim, J. G., Kim, Y. H., Lee, K. M., Sohn, H. C. & Choi, D. J., 2012 Aug 20, In : Thermochimica Acta. 542, p. 6-10 5 p.

Research output: Contribution to journalArticle

thermal stresses
Thermal stress
Thermal conductivity
Energy gap
thermal conductivity
3 Citations (Scopus)

High-mobility property of crystallized In-Te chalcogenide materials

Park, S. J., Park, S. J., Park, D., An, M., Cho, M. H., Kim, J., Na, H., Park, S. H. & Sohn, H., 2012 Apr 1, In : Electronic Materials Letters. 8, 2, p. 175-178 4 p.

Research output: Contribution to journalArticle

Crystallization
Phase separation
X rays
Carrier mobility
Hall effect
3 Citations (Scopus)

Physical and electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacks for nonvolatile memory applications

Oh, J., Na, H., Mok, I. S., Kim, J., Lee, K. & Sohn, H., 2012 Sep 1, In : Applied Physics A: Materials Science and Processing. 108, 3, p. 679-684 6 p.

Research output: Contribution to journalArticle

Charge trapping
Tunnels
Electric properties
Physical properties
Data storage equipment
2011
8 Citations (Scopus)

Anion-migration-induced bipolar resistance switching in electrochemically deposited TiOx films

Lee, S., Na, H., Kim, J., Moon, J. & Sohn, H., 2011 Jan 5, In : Journal of the Electrochemical Society. 158, 2, p. H88-H92

Research output: Contribution to journalArticle

Anions
Negative ions
Annealing
Electric potential
Oxygen
10 Citations (Scopus)

A study of surface-coated SiC whiskers on carbon fiber substrates and their properties for diesel particulate filter applications

Choi, Y. Y., Kim, J. G., Lee, K. M., Sohn, H. C. & Choi, D. J., 2011 May 1, In : Ceramics International. 37, 4, p. 1307-1312 6 p.

Research output: Contribution to journalArticle

Carbon fibers
Substrates
Coatings
Crystal whiskers
Gas permeability
1 Citation (Scopus)

Comparison of the crystallization behaviors in As-deposited and melt-quenched N-doped Ge2Sb2Te5 thin films

Do, K., Lee, D., Bae, J. H., Ko, D. H., Sohn, H. & Cho, M. H., 2011 Apr 29, In : Journal of the Electrochemical Society. 158, 4, p. H347-H351

Research output: Contribution to journalArticle

Crystallization
Nitrogen
crystallization
nitrogen
Thin films
10 Citations (Scopus)

Effect of W impurity on resistance switching characteristics of NiO x films

Kim, J., Na, H., Lee, S., Sung, Y. H., Yoo, J. H., Lee, D. S., Ko, D. H. & Sohn, H., 2011 Mar 1, In : Current Applied Physics. 11, 2 SUPPL., p. e70-e74

Research output: Contribution to journalArticle

Doping (additives)
Impurities
impurities
high resistance
MIM (semiconductors)
9 Citations (Scopus)

Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Kim, N. H., Kim, H. K., Lee, K. M., Sohn, H. C., Roh, J. S. & Choi, D. J., 2011 Jun 1, In : Thin Solid Films. 519, 16, p. 5323-5328 6 p.

Research output: Contribution to journalArticle

Crystallization
Doping (additives)
crystallization
Thin films
grain size
1 Citation (Scopus)

Effects of nitrogen on endurance of N-doped Ge2Sb 2Te5 films during laser-induced reversible switching

Do, K., Lee, D., Ko, D. H., Sohn, H. & Cho, M. H., 2011 Apr 29, In : Journal of the Electrochemical Society. 158, 4, p. H390-H393

Research output: Contribution to journalArticle

endurance
voids
Durability
Nitrogen
Crystalline materials
17 Citations (Scopus)

Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

Lee, D. S., Sung, Y. H., Lee, I. G., Kim, J. G., Sohn, H. & Ko, D. H., 2011 Mar 1, In : Applied Physics A: Materials Science and Processing. 102, 4, p. 997-1001 5 p.

Research output: Contribution to journalArticle

Durability
Reactive sputtering
Voltage measurement
Electric current measurement
Heat treatment
2 Citations (Scopus)

Enhanced tunneling properties of band-engineered (HfO2) x(SiO2)1-x/SiO2 double dielectric layers for non-volatile flash memory device

Heo, M. Y., Kim, J., Kang, H. Y., Oh, J., Lee, K. & Sohn, H., 2011 Mar 1, In : Current Applied Physics. 11, 2 SUPPL., p. e16-e20

Research output: Contribution to journalArticle

Flash memory
flash
tunnels
Tunnels
Data storage equipment
9 Citations (Scopus)

Interfacial reaction induced phase separation in LaxHf yO films

Ma, J. W., Lee, W. J., Cho, M. H., Lee, K. M., Sohn, H. C., Kim, C. S. & Cho, H. J., 2011 Jun 15, In : Journal of Applied Physics. 109, 12, 124106.

Research output: Contribution to journalArticle

x ray spectroscopy
annealing
atomic layer epitaxy
silicates
x ray diffraction
35 Citations (Scopus)

Phase-change memory in Bi2Te3 nanowires

Han, N., Kim, S. I., Yang, J. D., Lee, K., Sohn, H., So, H. M., Ahn, C. W. & Yoo, K., 2011 Apr 26, In : Advanced Materials. 23, 16, p. 1871-1875 5 p.

Research output: Contribution to journalArticle

Phase change memory
Nanowires
Crystalline materials
Electric potential
4 Citations (Scopus)

Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity

Kim, J., Na, H., Lee, S., Lee, K., Yoo, J. H., Ko, D. H. & Sohn, H., 2011 Sep 1, In : Thin Solid Films. 519, 22, p. 8119-8124 6 p.

Research output: Contribution to journalArticle

Impurities
impurities
Metals
Defects
defects
2010
13 Citations (Scopus)

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Min, B. G., Yoo, J. H., Sohn, H. C., Ko, D. H., Cho, M. H., Chung, K. B. & Lee, T. W., 2010 Feb 1, In : Thin Solid Films. 518, 8, p. 2065-2069 5 p.

Research output: Contribution to journalArticle

piles
Piles
Oxidation
oxidation
Scattering
9 Citations (Scopus)

Crystallization behaviors of laser induced Ge2 Sb2 Te5 in different amorphous states

Do, K., Lee, D., Sohn, H., Cho, M. H. & Ko, D. H., 2010 Feb 16, In : Journal of the Electrochemical Society. 157, 3

Research output: Contribution to journalArticle

Crystallization
crystallization
Lasers
lasers
Laser pulses
5 Citations (Scopus)
Doping (additives)
Data storage equipment
Metals
endurance
Nickel
5 Citations (Scopus)

Effect of bonding characteristics on the instability of gex Sb1-x Films

Park, S. J., Jang, M. H., Park, S. J., Cho, M. H., Kim, J. K., Ko, D. H. & Sohn, H. C., 2010 Nov 24, In : Journal of the Electrochemical Society. 157, 12, p. H1078-H1081

Research output: Contribution to journalArticle

Crystalline materials
Phase separation
Phase transitions
X ray absorption
Chemical analysis
14 Citations (Scopus)

Effect of doped nitrogen on the crystallization behaviors of Ge2 Sb2 Te5

Yang, I., Do, K., Chang, H. J., Ko, D. H. & Sohn, H., 2010 Mar 26, In : Journal of the Electrochemical Society. 157, 4, p. H483-H486

Research output: Contribution to journalArticle

Crystallization
Nitrogen
Sheet resistance
Transmission electron microscopy
Magnetron sputtering
18 Citations (Scopus)

Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Jang, M. H., Park, S. J., Lim, D. H., Park, S. J., Cho, M. H., Ko, D. H., Heo, M. Y., Sohn, H. C. & Kim, S. O., 2010 Feb 17, In : Applied Physics Letters. 96, 5, 052112.

Research output: Contribution to journalArticle

electronic structure
atoms
stoichiometry
photoelectrons
binding energy
4 Citations (Scopus)

Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

Yoo, J. H., Sohn, H., Ko, D. H. & Cho, M. H., 2010 Jul 23, In : Journal of the Electrochemical Society. 157, 8, p. H837-H841

Research output: Contribution to journalArticle

Silicides
silicides
Thermodynamic stability
thermal stability
augmentation
1 Citation (Scopus)

Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation

Song, J. H., Lim, D. H., Oh, E. S., Cho, M. H., Ann, J. P., Kim, J. G., Sohn, H. C. & Ko, D. H., 2010 Dec 1, In : Journal of the Korean Physical Society. 57, 6, p. 1467-1471 5 p.

Research output: Contribution to journalArticle

silicon oxides
amorphous silicon
nanowires
solid state
silicon
25 Citations (Scopus)

High current fast switching n-ZnO/p-Si diode

Choi, Y., Lee, K., Park, C. H., Lee, K. H., Nam, J. W., Sung, M. M., Lee, K. M., Sohn, H. & Im, S., 2010 Sep 1, In : Journal of Physics D: Applied Physics. 43, 34, 345101.

Research output: Contribution to journalArticle

high current
Diodes
diodes
Current density
Atomic layer deposition
5 Citations (Scopus)

Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Kang, H. Y., Heo, M. Y. & Sohn, H. C., 2010 Jan 1, In : Current Applied Physics. 10, 1 SUPPL. 1, p. e22-e26

Research output: Contribution to journalArticle

Silicates
tunnels
silicates
Tunnels
Energy gap
6 Citations (Scopus)

Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation

Yoo, J. H., Kim, S. W., Min, B. G., Sohn, H., Ko, D. H. & Cho, M. H., 2010 Nov, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28, 6, p. 1298-1303 6 p.

Research output: Contribution to journalArticle

Germanium
Silicon
germanium
Oxidation
oxidation
4 Citations (Scopus)

Study on the structural stability and charge trapping properties of High-k HfO2 and HFO2/Al2O3/HfO2 stacks

Ahn, Y. S., Huh, M. Y., Kang, H. Y. & Sohn, H., 2010 Mar 1, In : Journal of Korean Institute of Metals and Materials. 48, 3, p. 256-261 6 p.

Research output: Contribution to journalArticle

Charge trapping
Structural Stability
Trapping
Charge
Programming