• 1737 Citations
  • 22 h-Index
1993 …2019
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Research Output 1993 2019

  • 1737 Citations
  • 22 h-Index
  • 110 Article
  • 14 Conference contribution
  • 12 Conference article
  • 2 Paper
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Conference article
2006

Atomic layer deposited tungsten nitride thin film as a contact barrier layer for sub-80 nm dynamic random access memory

Kim, S. H., Kim, J. K., Kwak, N., Sohn, H., Kim, J., Jung, S. H., Hong, M. R., Lee, S. H. & Collins, J., 2006 Mar 23, In : Advanced Metallization Conference (AMC). p. 213-219 7 p.

Research output: Contribution to journalConference article

Tungsten
Atomic layer deposition
Nitrides
Data storage equipment
Thin films
2005
1 Citation (Scopus)

Effect of nitrogen incorporation on electrical properties of high-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

Seong, N. J., Yoon, S. G., Yeom, S. J., Woo, H. K., Kil, D. S., Roh, J. S. & Sohn, H. C., 2005 Dec 1, In : Integrated Ferroelectrics. 74, p. 131-136 6 p.

Research output: Contribution to journalConference article

Atomic layer deposition
atomic layer epitaxy
Leakage currents
capacitors
Electric properties
2004
8 Citations (Scopus)

Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs

Kil, D. S., Hong, K., Lee, K. J., Kim, J., Song, H. S., Park, K. S., Roh, J. S., Sohn, H., Kim, J. W. & Park, S. W., 2004 Oct 1, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 126-127 2 p.

Research output: Contribution to journalConference article

Dynamic random access storage
Leakage currents
Capacitors
Atomic layer deposition
Laminates
1 Citation (Scopus)

Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

Lim, K. Y., Jang, S. A., Kim, Y. S., Cho, H. J., Oh, J. G., Chung, S. O., Lee, S. J., Sun, W. K., Suh, J. B., Yang, H. S. & Sohn, H. C., 2004 Jul 12, In : Annual Proceedings - Reliability Physics (Symposium). p. 485-488 4 p.

Research output: Contribution to journalConference article

Dynamic random access storage
Transistors
Nitrides
Leakage currents
Drain current
2 Citations (Scopus)

Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

Lim, K. Y., Jang, S. A., Kim, Y. S., Cho, H. J., Oh, J. G., Chung, S. O., Lee, S. J., Sun, W. K., Suh, J. B., Yang, H. S. & Sohn, H. C., 2004 Jan 1, In : IEEE International Reliability Physics Symposium Proceedings. 2004-January, January, p. 485-488 4 p., 1315376.

Research output: Contribution to journalConference article

Dynamic random access storage
Transistors
Nitrides
Leakage currents
Drain current

Pulsed chemical vapor deposition of tungsten (W) thin film as a nucleation layer for W-plug fill of sub-100 nm dynamic random access memory technology

Kim, S. H., Hwang, E. S., Park, T. S., Kawk, N., Pyi, S. H., Kim, J. K. & Sohn, H., 2004 Dec 1, In : Advanced Metallization Conference (AMC). p. 749-755 7 p.

Research output: Contribution to journalConference article

Tungsten
Chemical vapor deposition
Nucleation
Data storage equipment
Thin films
2002
9 Citations (Scopus)

Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

Chung, S. W., Ahn, S. T., Sohn, H. C., Ku, J., Park, S., Song, Y. W., Park, H. S. & Lee, S. D., 2002 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 233-236 4 p.

Research output: Contribution to journalConference article

Dynamic random access storage
Oxides
Chemical vapor deposition
isolation
vapor deposition
2001

Improvement of TaNx barrier effectiveness without Cu (111) texture degradation

Min, W. S., Pyo, S. G., Kim, H. D., Kim, S., Lee, T. K., Park, S. K. & Sohn, H. C., 2001 Dec 1, In : Advanced Metallization Conference (AMC). p. 619-623 5 p.

Research output: Contribution to journalConference article

Physical vapor deposition
Textures
Degradation
Copper
Vacuum
6 Citations (Scopus)

Superfilling characteristic and evaluation of chemically enhanced CVD(CECVD) Cu process

Pyo, S. G., Min, W. S., Kim, H. D., Kim, S., Lee, T. K., Park, S. K. & Sohn, H. C., 2001 Dec 1, In : Advanced Metallization Conference (AMC). p. 209-214 6 p.

Research output: Contribution to journalConference article

Chemical vapor deposition
Organic Chemicals
Organic chemicals
Catalysis
Metals
1997
7 Citations (Scopus)

Electrical and structural properties of LT-GaAs: influence of As/Ga flux ratio and growth temperature

Luysberg, M., Sohn, H., Prasad, A., Specht, P., Fujioka, H., Klockenbrink, R. & Weber, E. R., 1997 Jan 1, In : Materials Research Society Symposium - Proceedings. 442, p. 485-490 6 p.

Research output: Contribution to journalConference article

Growth temperature
Structural properties
Electric properties
electrical properties
Fluxes
1 Citation (Scopus)

New insights into the transport and field-enhancement effects in sol-gel derived colossal magnetoresistive thin films

Krishnan, K. M., Ju, H. L., Sohn, H. C., Nelson, C. & Modak, A. R., 1997 Dec 1, In : Materials Research Society Symposium - Proceedings. 477, p. 139-144 6 p.

Research output: Contribution to journalConference article

Sol-gels
Amplification
gels
Thin films
augmentation
1993

Growth of strain-free GaAs on Si/sapphire

Sohn, H., Weber, E. R., Tu, J. & Smith, J. S., 1993 Dec 1, In : Materials Research Society Symposium - Proceedings. 308, p. 423-426 4 p.

Research output: Contribution to journalConference article

Aluminum Oxide
Sapphire
sapphire
Epitaxial layers
Buffer layers