• 1459 Citations
  • 18 h-Index
19952020

Research output per year

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Research Output

  • 1459 Citations
  • 18 h-Index
  • 114 Article
  • 33 Conference contribution
  • 13 Conference article
  • 3 Paper
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Article
2020
2019
3 Citations (Scopus)

Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module

Kim, I. J. & Yun, I., 2019 Mar 15, In : IEEE Sensors Journal. 19, 6, p. 2356-2361 6 p., 8565991.

Research output: Contribution to journalArticle

The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes

Shin, D., Park, B., Chae, Y. & Yun, I., 2019 Jul, In : IEEE Transactions on Electron Devices. 66, 7, p. 2986-2991 6 p., 8710606.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2018
2 Citations (Scopus)

Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design

Park, C. & Yun, I., 2018 Oct 15, In : Semiconductor Science and Technology. 33, 11, 115014.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Shin, Y. H., Bae, M. S., Park, C., Park, J. W., Park, H., Lee, Y. J. & Yun, I., 2018 May 16, In : Semiconductor Science and Technology. 33, 6, 065010.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2017

Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Shin, Y. H., Weon, S., Hong, D. & Yun, I., 2017 Apr, In : IEEE Transactions on Electron Devices. 64, 4, p. 1433-1440 8 p., 7859381.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Degradation mechanisms of amorphous ingazno thin-film transistors used in foldable displays by dynamic mechanical stress

Lee, S. M., Shin, D. & Yun, I., 2017 Jan, In : IEEE Transactions on Electron Devices. 64, 1, p. 170-175 6 p., 7769219.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays

Bae, M. S., Park, C., Shin, D., Lee, S. M. & Yun, I., 2017 Jul 1, In : Solid-State Electronics. 133, p. 1-5 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
1 Citation (Scopus)

Structure variation effects on device reliability of single photon avalanche diodes

Shin, D., Park, B., Chae, Y. & Yun, I., 2017 Sep, In : Microelectronics Reliability. 76-77, p. 610-613 4 p.

Research output: Contribution to journalArticle

2016
6 Citations (Scopus)
7 Citations (Scopus)

Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors

Lee, S. M., Park, C. & Yun, I., 2016 Sep 1, In : Microelectronics Reliability. 64, p. 84-87 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

Shin, D., Bae, M. S. & Yun, I., 2016 Sep 1, In : Microelectronics Reliability. 64, p. 109-112 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Plasma Process Uniformity Diagnosis Technique Using Optical Emission Spectroscopy With Spatially Resolved Ring Lens

Kim, I. J. & Yun, I., 2016 Sep, In : IEEE Transactions on Industrial Electronics. 63, 9, p. 5674-5681 8 p., 7475885.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2015

Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory

Lim, J. Y., Moon, P., Lee, S. M., Noh, K. W., Youn, T. U., Kim, J. W. & Yun, I., 2015 Sep 1, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 319-325 7 p., 7112489.

Research output: Contribution to journalArticle

1 Citation (Scopus)

An analytical avalanche breakdown model for double gate MOSFET

Cho, E. N., Shin, Y. H. & Yun, I., 2015 Jan 1, In : Microelectronics Reliability. 55, 1, p. 38-41 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Characterization of HfO x N y thin film formation by in-situ plasma enhanced atomic layer deposition using NH 3 and N 2 plasmas

Lee, Y. B., Oh, I. K., Cho, E. N., Moon, P., Kim, H. & Yun, I., 2015 Sep 15, In : Applied Surface Science. 349, p. 757-762 6 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Design of red-emitting external cavity diode laser module for high-slope efficiency and narrow bandwidth

Park, J., Song, H. J., Na, H. M., Lee, J. H. & Yun, I., 2015 Sep 1, In : Optical Engineering. 54, 9, 096109.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Effect of electric field polarity on inter-poly dielectric during cell operation for the retention characteristics

Moon, P., Lim, J. Y., Youn, T. U., Noh, K. W. & Yun, I., 2015 Apr 1, In : Microelectronics Reliability. 55, 5, p. 795-798 4 p.

Research output: Contribution to journalArticle

Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Lee, S. H., Lee, T. I., Lee, S. J., Lee, S. M., Yun, I. & Myoung, J. M., 2015 Jan 14, In : ACS Applied Materials and Interfaces. 7, 1, p. 929-934 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Ka, J., Cho, E. N., Lee, M. J., Myoung, J. M. & Yun, I., 2015 Jun 1, In : Current Applied Physics. 15, 6, p. 675-678 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices

Lim, J. Y. & Yun, I., 2015 Aug, In : Microelectronics Reliability. 55, 9-10, p. 1320-1322 3 p.

Research output: Contribution to journalArticle

Uv-cured reactive mesogen-YInZnO hybrid materials as semiconducting channels in thin-film transistors using a solution-process

Kim, S. Y., Jung, Y. H., Cho, M. J., Lee, J. W., Park, H. G., Kim, D. H., Kim, T. W., Yun, I. & Seo, D. S., 2015 Jan 1, In : ECS Solid State Letters. 4, 3, p. P22-P24

Research output: Contribution to journalArticle

1 Citation (Scopus)
2014

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

Cho, E. N., Shin, Y. H. & Yun, I., 2014 Nov 7, In : Journal of Applied Physics. 116, 17, 174507.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation

Lim, J. Y., Moon, P., Lee, S. M. & Yun, I., 2014 Jan 1, In : ECS Transactions. 60, 1, p. 957-961 5 p.

Research output: Contribution to journalArticle

Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress

Kang, J. H., Cho, E. N. & Yun, I., 2014 Jan 1, In : Microelectronics Reliability. 54, 9-10, p. 2164-2166 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Effect of SiOx/SiNx stacked gate dielectric structure on the instability of a-IGZO thin film transistors

Shin, D., Cho, E. N., Park, S. & Yun, I., 2014, In : ECS Transactions. 60, 1, p. 951-955 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Effect of tilted angle in trench structure on phase change memory operation using TCAD simulation

Shin, Y. H., Lee, S. M. & Yun, I., 2014, In : ECS Transactions. 60, 1, p. 995-999 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effect of trench depth variation on phase change memory operation using TCAD simulation

Lee, S. M., Shin, Y. H. & Yun, I., 2014, In : ECS Transactions. 60, 1, p. 989-994 6 p.

Research output: Contribution to journalArticle

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Moon, P., Lim, J. Y., Youn, T. U., Park, S. K. & Yun, I., 2014 Apr 1, In : Solid-State Electronics. 94, p. 51-55 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Modeling of subthreshold characteristics for double gate MOSFET using neural networks and genetic algorithm

Cho, E. N., Shin, Y. H., Moon, P. & Yun, I., 2014, In : ECS Transactions. 60, 1, p. 1033-1037 5 p.

Research output: Contribution to journalArticle

2013
8 Citations (Scopus)
2 Citations (Scopus)

Channel length-dependent charge detrapping on threshold voltage shift of amorphous InGaZnO TFTs under dynamic bias stress

Park, S., Cho, E. N. & Yun, I., 2013 Nov 11, In : IEEE Transactions on Electron Devices. 60, 5, p. 1689-1694 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

Kim, C. E. & Yun, I., 2013 Jun 30, In : Thin Solid Films. 537, p. 275-278 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors

Park, S., Cho, E. N. & Yun, I., 2013 Aug 1, In : Journal of the Society for Information Display. 21, 8, p. 333-338 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Moon, P., Lim, J. Y., Youn, T. U., Noh, K. W., Park, S. K. & Yun, I., 2013 Sep 1, In : Microelectronics Reliability. 53, 9-11, p. 1338-1341 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Kang, J. H., Namkyu Cho, E., Eun Kim, C., Lee, M. J., Jeong Lee, S., Myoung, J. M. & Yun, I., 2013 Jun 3, In : Applied Physics Letters. 102, 22, 222103.

Research output: Contribution to journalArticle

32 Citations (Scopus)

Predictive modeling and analysis of HfO2 thin film process based on Bayesian information criterion using PCA-based neural networks

Ko, Y. D., Moon, P., Kim, C. E., Ham, M. H., Jeong, M. K., Garcia-Diaz, A., Myoung, J. M. & Yun, I., 2013 Sep 1, In : Surface and Interface Analysis. 45, 9, p. 1334-1339 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2012

Device characteristics of InSnO thin-film transistors with a modulated channel

Kim, C. E. & Yun, I., 2012 Dec 1, In : Semiconductor Science and Technology. 27, 12, 125006.

Research output: Contribution to journalArticle

Effects of nitrogen doping on device characteristics of InSnO thin film transistor

Eun Kim, C. & Yun, I., 2012 Jan 2, In : Applied Physics Letters. 100, 1, 013501.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Effects of the interfacial layer on electrical characteristics of Al 2 O 3 /TiO 2 /Al 2 O 3 thin films for gate dielectrics

Kim, C. E. & Yun, I., 2012 Jan 15, In : Applied Surface Science. 258, 7, p. 3089-3093 5 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs

Kang, M. & Yun, I., 2012 Sep 1, In : Microelectronics Reliability. 52, 9-10, p. 1936-1939 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

Park, S., Cho, E. N. & Yun, I., 2012 Sep 1, In : Solid-State Electronics. 75, p. 93-96 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Modeling and optimization of ITO/Al/ITO multilayer films characteristics using neural network and genetic algorithm

Cho, E. N., Moon, P., Kim, C. E. & Yun, I., 2012 Aug 1, In : Expert Systems with Applications. 39, 10, p. 8885-8889 5 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)