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Research Output 1995 2019

  • 1389 Citations
  • 17 h-Index
  • 111 Article
  • 31 Conference contribution
  • 13 Conference article
  • 3 Paper
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Article
2019
Gates (transistor)
Field effect transistors
field effect transistors
Doping (additives)
Laplace equation

Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module

Kim, I. J. & Yun, I., 2019 Mar 15, In : IEEE Sensors Journal. 19, 6, p. 2356-2361 6 p., 8565991.

Research output: Contribution to journalArticle

Optical emission spectroscopy
optical emission spectroscopy
modules
Plasmas
abnormalities

The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes

Shin, D., Park, B., Chae, Y. & Yun, I., 2019 Jul 1, In : IEEE Transactions on Electron Devices. 66, 7, p. 2986-2991 6 p., 8710606.

Research output: Contribution to journalArticle

Avalanche diodes
Silicon
Photons
Computer aided design
Electric fields
2018
1 Citation (Scopus)
Computer Integrated Manufacturing
Computer integrated manufacturing
Optical emission spectroscopy
Spectroscopy
Plasma

Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design

Park, C. & Yun, I., 2018 Oct 15, In : Semiconductor Science and Technology. 33, 11, 115014.

Research output: Contribution to journalArticle

fins
Field effect transistors
field effect transistors
Heating
Computer aided design
1 Citation (Scopus)

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Shin, Y. H., Bae, M. S., Park, C., Park, J. W., Park, H., Lee, Y. J. & Yun, I., 2018 May 16, In : Semiconductor Science and Technology. 33, 6, 065010.

Research output: Contribution to journalArticle

Gates (transistor)
field effect transistors
Poisson equation
Field effect transistors
Charge density
2017
5 Citations (Scopus)

Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Shin, Y. H., Weon, S., Hong, D. & Yun, I., 2017 Apr 1, In : IEEE Transactions on Electron Devices. 64, 4, p. 1433-1440 8 p., 7859381.

Research output: Contribution to journalArticle

Field effect transistors
Analytical models
Doping (additives)
Hot carriers
Fourier series
6 Citations (Scopus)

Degradation mechanisms of amorphous ingazno thin-film transistors used in foldable displays by dynamic mechanical stress

Lee, S. M., Shin, D. & Yun, I., 2017 Jan 1, In : IEEE Transactions on Electron Devices. 64, 1, p. 170-175 6 p., 7769219.

Research output: Contribution to journalArticle

Amorphous films
Thin film transistors
Display devices
Degradation
Computer aided design
Thin film transistors
Polysilicon
transistors
cracks
Cracks
3 Citations (Scopus)

Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays

Bae, M. S., Park, C., Shin, D., Lee, S. M. & Yun, I., 2017 Jul 1, In : Solid-State Electronics. 133, p. 1-5 5 p.

Research output: Contribution to journalArticle

Thin film transistors
Polysilicon
transistors
Display devices
silicon
1 Citation (Scopus)
Amorphous films
Thin film transistors
transistors
degradation
Degradation

Structure variation effects on device reliability of single photon avalanche diodes

Shin, D., Park, B., Chae, Y. & Yun, I., 2017 Sep 1, In : Microelectronics Reliability. 76-77, p. 610-613 4 p.

Research output: Contribution to journalArticle

Avalanche diodes
avalanche diodes
Photons
Photodetectors
photons
2016
6 Citations (Scopus)
Oxides
Analytical models
field effect transistors
MOSFET devices
oxides
6 Citations (Scopus)
Analytical models
field effect transistors
Doping (additives)
impurities
Impurities
1 Citation (Scopus)

Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors

Lee, S. M., Park, C. & Yun, I., 2016 Sep 1, In : Microelectronics Reliability. 64, p. 84-87 4 p.

Research output: Contribution to journalArticle

Thin film transistors
Polysilicon
transistors
cracks
Cracks
4 Citations (Scopus)

Instability of oxide thin film transistor under electrical–mechanical hybrid stress for foldable display

Shin, D., Bae, M. S. & Yun, I., 2016 Sep 1, In : Microelectronics Reliability. 64, p. 109-112 4 p.

Research output: Contribution to journalArticle

Thin film transistors
Oxide films
transistors
Display devices
oxides
5 Citations (Scopus)

Plasma Process Uniformity Diagnosis Technique Using Optical Emission Spectroscopy With Spatially Resolved Ring Lens

Kim, I. J. & Yun, I., 2016 Sep 1, In : IEEE Transactions on Industrial Electronics. 63, 9, p. 5674-5681 8 p., 7475885.

Research output: Contribution to journalArticle

Optical emission spectroscopy
Lenses
Plasmas
Plasma diagnostics
Light sources
2015
1 Citation (Scopus)

Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory

Lim, J. Y., Moon, P., Lee, S. M., Noh, K. W., Youn, T. U., Kim, J. W. & Yun, I., 2015 Sep 1, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 319-325 7 p., 7112489.

Research output: Contribution to journalArticle

Flash memory
Oxides
Nitrides
Degradation
Activation energy
3 Citations (Scopus)

An analytical avalanche breakdown model for double gate MOSFET

Cho, E. N., Shin, Y. H. & Yun, I., 2015 Jan 1, In : Microelectronics Reliability. 55, 1, p. 38-41 4 p.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
avalanches
Analytical models
field effect transistors
4 Citations (Scopus)

Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Lee, Y. B., Oh, I. K., Cho, E. N., Moon, P., Kim, H. & Yun, I., 2015 Jan 1, In : Applied Surface Science. 349, p. 757-762 6 p.

Research output: Contribution to journalArticle

Atomic layer deposition
Plasmas
Thin films
Permittivity
Nitrogen plasma
2 Citations (Scopus)

Design of red-emitting external cavity diode laser module for high-slope efficiency and narrow bandwidth

Park, J., Song, H. J., Na, H. M., Lee, J. H. & Yun, I., 2015 Sep 1, In : Optical Engineering. 54, 9, 096109.

Research output: Contribution to journalArticle

Semiconductor lasers
modules
semiconductor lasers
slopes
bandwidth

Effect of electric field polarity on inter-poly dielectric during cell operation for the retention characteristics

Moon, P., Lim, J. Y., Youn, T. U., Noh, K. W. & Yun, I., 2015 Apr 1, In : Microelectronics Reliability. 55, 5, p. 795-798 4 p.

Research output: Contribution to journalArticle

polarity
Electric fields
electric fields
cells
leakage
4 Citations (Scopus)

Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Lee, S. H., Lee, T. I., Lee, S. J., Lee, S. M., Yun, I. & Myoung, J. M., 2015 Jan 14, In : ACS Applied Materials and Interfaces. 7, 1, p. 929-934 6 p.

Research output: Contribution to journalArticle

Silicon
Nanowires
Metals
Field effect transistors
Catalysts
11 Citations (Scopus)

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Ka, J., Cho, E. N., Lee, M. J., Myoung, J. M. & Yun, I., 2015 Jun 1, In : Current Applied Physics. 15, 6, p. 675-678 4 p.

Research output: Contribution to journalArticle

Zinc Oxide
gallium oxides
Gallium
Indium
Thin film transistors

Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices

Lim, J. Y. & Yun, I., 2015 Aug 1, In : Microelectronics Reliability. 55, 9-10, p. 1320-1322 3 p.

Research output: Contribution to journalArticle

Phase change memory
flicker
Pore structure
porosity
Data storage equipment
1 Citation (Scopus)

Uv-cured reactive mesogen-YInZnO hybrid materials as semiconducting channels in thin-film transistors using a solution-process

Kim, S. Y., Jung, Y. H., Cho, M. J., Lee, J. W., Park, H. G., Kim, D. H., Kim, T. W., Yun, I. & Seo, D-S., 2015 Jan 1, In : ECS Solid State Letters. 4, 3, p. P22-P24

Research output: Contribution to journalArticle

Hybrid materials
Thin film transistors
Ultraviolet radiation
Curing
Electrons
2014
1 Citation (Scopus)

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

Cho, E. N., Shin, Y. H. & Yun, I., 2014 Jan 1, In : Journal of Applied Physics. 116, 17, 174507.

Research output: Contribution to journalArticle

metal oxide semiconductors
field effect transistors
degradation
threshold voltage
centroids

Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation

Lim, J. Y., Moon, P., Lee, S. M. & Yun, I., 2014 Jan 1, In : ECS Transactions. 60, 1, p. 957-961 5 p.

Research output: Contribution to journalArticle

Flash memory
Data storage equipment
Degradation
2 Citations (Scopus)

Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress

Kang, J. H., Cho, E. N. & Yun, I., 2014 Jan 1, In : Microelectronics Reliability. 54, 9-10, p. 2164-2166 3 p.

Research output: Contribution to journalArticle

Drain current
Amorphous films
Thin film transistors
transistors
conduction
5 Citations (Scopus)

Effect of SiOx/SiNx stacked gate dielectric structure on the instability of a-IGZO thin film transistors

Shin, D., Cho, E. N., Park, S. & Yun, I., 2014 Jan 1, In : ECS Transactions. 60, 1, p. 951-955 5 p.

Research output: Contribution to journalArticle

Gate dielectrics
Gallium
Thin film transistors
Zinc oxide
Indium
1 Citation (Scopus)

Effect of tilted angle in trench structure on phase change memory operation using TCAD simulation

Shin, Y. H., Lee, S. M. & Yun, I., 2014 Jan 1, In : ECS Transactions. 60, 1, p. 995-999 5 p.

Research output: Contribution to journalArticle

Phase change memory
Computer aided design
Joule heating
Electric properties

Effect of trench depth variation on phase change memory operation using TCAD simulation

Lee, S. M., Shin, Y. H. & Yun, I., 2014 Jan 1, In : ECS Transactions. 60, 1, p. 989-994 6 p.

Research output: Contribution to journalArticle

Phase change memory
Data storage equipment
Flash memory
3 Citations (Scopus)

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Moon, P., Lim, J. Y., Youn, T. U., Park, S. K. & Yun, I., 2014 Apr 1, In : Solid-State Electronics. 94, p. 51-55 5 p.

Research output: Contribution to journalArticle

Charge trapping
Flash memory
flash
trapping
Electric potential

Modeling of subthreshold characteristics for double gate MOSFET using neural networks and genetic algorithm

Cho, E. N., Shin, Y. H., Moon, P. & Yun, I., 2014 Jan 1, In : ECS Transactions. 60, 1, p. 1033-1037 5 p.

Research output: Contribution to journalArticle

MOSFET devices
Genetic algorithms
Neural networks
Threshold voltage
2013
8 Citations (Scopus)
metal oxide semiconductors
field effect transistors
Poisson equation
threshold voltage
film thickness
2 Citations (Scopus)
metal oxide semiconductors
field effect transistors
inversions
Poisson equation
screening
6 Citations (Scopus)

Channel length-dependent charge detrapping on threshold voltage shift of amorphous InGaZnO TFTs under dynamic bias stress

Park, S., Cho, E. N. & Yun, I., 2013 Nov 11, In : IEEE Transactions on Electron Devices. 60, 5, p. 1689-1694 6 p.

Research output: Contribution to journalArticle

Amorphous films
Thin film transistors
Threshold voltage
Electric fields
5 Citations (Scopus)

Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

Kim, C. E. & Yun, I., 2013 Jun 30, In : Thin Solid Films. 537, p. 275-278 4 p.

Research output: Contribution to journalArticle

Thin film transistors
transistors
thin films
Threshold voltage
Carrier concentration
6 Citations (Scopus)

Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors

Park, S., Cho, E. N. & Yun, I., 2013 Aug 1, In : Journal of the Society for Information Display. 21, 8, p. 333-338 6 p.

Research output: Contribution to journalArticle

Thin film transistors
transistors
Lighting
illumination
thin films
5 Citations (Scopus)

Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Moon, P., Lim, J. Y., Youn, T. U., Noh, K. W., Park, S. K. & Yun, I., 2013 Sep 1, In : Microelectronics Reliability. 53, 9-11, p. 1338-1341 4 p.

Research output: Contribution to journalArticle

Flash memory
Leakage currents
floating
flash
leakage
28 Citations (Scopus)

Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Kang, J. H., Namkyu Cho, E., Eun Kim, C., Lee, M. J., Jeong Lee, S., Myoung, J. M. & Yun, I., 2013 Jun 3, In : Applied Physics Letters. 102, 22, 222103.

Research output: Contribution to journalArticle

transistors
augmentation
thin films
photoelectron spectroscopy
oxygen ions
3 Citations (Scopus)

Predictive modeling and analysis of HfO2 thin film process based on Bayesian information criterion using PCA-based neural networks

Ko, Y. D., Moon, P., Kim, C. E., Ham, M. H., Jeong, M. K., Garcia-Diaz, A., Myoung, J. M. & Yun, I., 2013 Sep 1, In : Surface and Interface Analysis. 45, 9, p. 1334-1339 6 p.

Research output: Contribution to journalArticle

principal components analysis
Principal component analysis
Neural networks
Thin films
thin films
2012

Device characteristics of InSnO thin-film transistors with a modulated channel

Kim, C. E. & Yun, I., 2012 Dec 1, In : Semiconductor Science and Technology. 27, 12, 125006.

Research output: Contribution to journalArticle

Thin film transistors
Carrier concentration
transistors
thin films
Electrodes
21 Citations (Scopus)

Effects of nitrogen doping on device characteristics of InSnO thin film transistor

Eun Kim, C. & Yun, I., 2012 Jan 2, In : Applied Physics Letters. 100, 1, 013501.

Research output: Contribution to journalArticle

transistors
nitrogen
thin films
insertion
crystallinity
17 Citations (Scopus)

Effects of the interfacial layer on electrical characteristics of Al 2O 3/TiO 2/Al 2O 3 thin films for gate dielectrics

Kim, C. E. & Yun, I., 2012 Jan 15, In : Applied Surface Science. 258, 7, p. 3089-3093 5 p.

Research output: Contribution to journalArticle

Gate dielectrics
Annealing
Thin films
Dielectric films
Atomic layer deposition
1 Citation (Scopus)

Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs

Kang, M. & Yun, I., 2012 Sep 1, In : Microelectronics Reliability. 52, 9-10, p. 1936-1939 4 p.

Research output: Contribution to journalArticle

field effect transistors
degradation
Degradation
Charge trapping
Geometry
5 Citations (Scopus)

Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors

Park, S., Cho, E. N. & Yun, I., 2012 Sep 1, In : Solid-State Electronics. 75, p. 93-96 4 p.

Research output: Contribution to journalArticle

Amorphous films
Thin film transistors
transistors
thin films
insulators
16 Citations (Scopus)

Modeling and optimization of ITO/Al/ITO multilayer films characteristics using neural network and genetic algorithm

Cho, E. N., Moon, P., Kim, C. E. & Yun, I., 2012 Aug 1, In : Expert Systems with Applications. 39, 10, p. 8885-8889 5 p.

Research output: Contribution to journalArticle

Multilayer films
Genetic algorithms
Neural networks
Sheet resistance
Opacity
18 Citations (Scopus)

Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures

Cho, E. N., Park, S. & Yun, I., 2012 Nov 1, In : Current Applied Physics. 12, 6, p. 1606-1610 5 p.

Research output: Contribution to journalArticle

Spectroscopic ellipsometry
Partial pressure
ellipsometry
partial pressure
Thin films
17 Citations (Scopus)

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Park, S., Cho, E. N. & Yun, I., 2012 Sep 1, In : Microelectronics Reliability. 52, 9-10, p. 2215-2219 5 p.

Research output: Contribution to journalArticle

Amorphous films
Thin film transistors
Threshold voltage
threshold voltage
transistors