• Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
19992020

Research activity per year

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  • 2016

    Controlling optical properties of Ge-on-Si by thermal annealing and etching process

    Lee, C., Ki, B., Yoo, Y. S., Jang, M. H., Oh, J. & Cho, Y. H., 2016 Jan 7, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc., 7375929. (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; vol. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

    Ki, B., Baek, J., Lee, C., Cho, Y. H. & Oh, J., 2016 Jan 7, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc., 7375928. (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; vol. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2013

    A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer

    Yum, J. H., Shin, H. S., Mushinski, R. M., Hudnall, T. W., Oh, J., Loh, W. Y., Bielawski, C. W., Bersuker, G., Banerjee, S. K., Wang, W. E., Kirsch, P. D. & Jammy, R., 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545611. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2012

    Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world

    Kang, C. Y., Ang, K. W., Hill, R., Loh, W. Y., Oh, J., Lee, R., Gilmer, D., Bersuker, G., Hobbs, C., Kirsch, P., Hummler, K., Arkalgud, S. & Jammy, R., 2012, ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology. 6232867. (ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • III-V gate stack interface improvement to enable high mobility 11nm node CMOS

    Chen, Y. T., Huang, J., Price, J., Lysaght, P., Veksler, D., Weiland, C., Woicik, J. C., Bersuker, G., Hill, R., Oh, J., Kirsch, P. D., Jammy, R. & Lee, J. C., 2012, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 6210157. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax

    Kim, T. W., Hill, R. J. W., Young, C. D., Veksler, D., Morassi, L., Oktybrshky, S., Oh, J., Kang, C. Y., Kim, D. H., Del Alamo, J. A., Hobbs, C., Kirsch, P. D. & Jammy, R., 2012, 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. p. 179-180 2 p. 6242520. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    25 Citations (Scopus)
  • Integration challenges of III-V materials in advanced CMOS logic

    Hill, R. J. W., Huang, J., Loh, W. Y., Kim, T., Wong, M. H., Veksler, D., Cunningham, T. H., Droopad, R., Oh, J., Hobbs, C., Kirsch, P. D. & Jammy, R., 2012, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2. 6 ed. p. 179-184 6 p. (ECS Transactions; vol. 45, no. 6).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2011

    CMOS scaling with III-V channels for improved performance and low power

    Hill, R. J. W., Oh, J., Park, C., Barnett, J., Price, J., Huang, J., Goel, N., Loh, W. Y., Kirsch, P., Majhi, P. & Jammy, R., 2011, Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3 ed. p. 335-344 10 p. (ECS Transactions; vol. 35, no. 3).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)
  • Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET

    Shin, H. S., Oh, S. K., Kang, M. H., Jang, J. H., Oh, J., Majhi, P., Jammy, R., Chung, Y. S., Kim, S. S., Lee, D. S., Lee, S. J. & Lee, H. D., 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 6135248. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2010

    Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node

    Ok, I., Young, C. D., Loh, W. Y., Ngai, T., Lian, S., Oh, J., Rodgers, M. P., Bennett, S., Stamper, H. O., Franca, D. L., Lin, S., Akarvardar, K., Smith, C., Hobbs, C., Kirsch, P. & Jammy, R., 2010, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 17-18 2 p. 5556138. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    11 Citations (Scopus)
  • High-performance enhancement-mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

    Ok, I., Hung, P. Y., Veksler, D., Oh, J. & Jammy, P. M. R., 2010, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. p. 166-169 4 p. 5618407. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Hole band anisotropy effect on on-state performance of biaxial compressive strained SiGe-based short channel QW pMOSFETs: Experimental observations

    Lee, S. H., Nainani, A., Oh, J., Kirsch, P., Banerjee, S. K. & Jammy, R., 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 126-127 2 p. 5488920. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • Novel Ni germanide technology with co-sputtering of Ni and Pt for thermally stable Ge MOSFETs on Ge-on-Si substrate

    Kang, M. H., Oh, S. K., Shin, H. S., Yoo, J. H., Lee, G. W., Wang, J. S., Woo Oh, J., Majhi, P., Jammy, R. & Lee, H. D., 2010, 2010 Silicon Nanoelectronics Workshop, SNW 2010. 5562558. (2010 Silicon Nanoelectronics Workshop, SNW 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • Prospect of tunneling green transistor for 0.1V CMOS

    Hu, C., Patel, P., Bowonder, A., Jeon, K., Kim, S. H., Loh, W. Y., Kang, C. Y., Oh, J., Majhi, P., Javey, A., Liu, T. J. K. & Jammy, R., 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 16.1.1-16.1.4 5703372. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    53 Citations (Scopus)
  • Reducing Rext in laser annealed enhancement-mode In 0.53Ga0.47as surface channel n-MOSFET

    Ok, I., Veksler, D., Hung, P. Y., Oh, J., Moore, R. L., McDonough, C., Geer, R. E., Gaspe, C. K., Santos, M. B., Wong, G., Kirsch, P., Tseng, H. H., Bersuker, G., Hobbs, C. & Jammy, R., 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 38-39 2 p. 5488957. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)
  • Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow

    Hill, R. J. W., Park, C., Barnett, J., Price, J., Huang, J., Goel, N., Loh, W. Y., Oh, J., Smith, C. E., Kirsch, P., Majhi, P. & Jammy, R., 2010, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 6.2.1-6.2.4 5703307. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    11 Citations (Scopus)
  • SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain

    Oh, J., Lee, S. H., Min, K. S., Huang, J., Min, B. G., Sassman, B., Jeon, K., Loh, W. Y., Barnett, J., Ok, I., Kang, C. Y., Smith, C., Ko, D. H., Kirsch, P. D. & Jammy, R., 2010, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 39-40 2 p. 5556127. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    10 Citations (Scopus)
  • Si tunnel transistors with a novel silicided source and 46mV/dec swing

    Jeon, K., Loh, W. Y., Patel, P., Kang, C. Y., Oh, J., Bowonder, A., Park, C., Park, C. S., Smith, C., Majhi, P., Tseng, H. H., Jammy, R., Liu, T. J. K. & Hu, C., 2010, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 121-122 2 p. 5556195. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    206 Citations (Scopus)
  • Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm

    Loh, W. Y., Jeon, K., Kang, C. Y., Oh, J., Patel, P., Smith, C., Barnett, J., Park, C., Liu, T. J. K., Tseng, H. H., Majhi, P., Jammy, R. & Hu, C., 2010, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. p. 162-165 4 p. 5618418. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    18 Citations (Scopus)
  • 2009

    Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

    Oh, J., Majhi, P., Jammy, R., Joe, R., Dip, A., Sugawara, T., Akasaka, Y., Kaitsuka, T., Arikado, T. & Tomoyasu, M., 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. p. 22-23 2 p. 5159274. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    13 Citations (Scopus)
  • CMOS band-edge Schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

    Cossa, B. E., Loh, W. Y., Oh, J., Smith, G., Smith, C., Adhikari, H., Sassman, B., Parthasarathy, S., Barnett, J., Majhi, P., Wallacea, R. M., Kim, J. & Jammy, R., 2009, 2009 Symposium on VLSI Technology, VLSIT 2009. p. 104-105 2 p. 5200650. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)
  • Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

    Oh, J., Ok, I., Kang, C. Y., Jamil, M., Lee, S. H., Loh, W. Y., Huang, J., Sassman, B., Smith, L., Parthasarathy, S., Coss, B. E., Choi, W. H., Lee, H. D., Cho, M., Banerjee, S. K., Majhi, P., Kirsch, P. D., Tseng, H. H. & Jammy, R., 2009, 2009 Symposium on VLSI Technology, VLSIT 2009. p. 238-239 2 p. 5200612. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    16 Citations (Scopus)
  • Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

    Loh, W. Y., Hung, P. Y., Coss, B. E., Kalra, P., Ok, I., Smith, G., Kang, C. Y., Lee, S. H., Oh, J., Sassman, B., Majhi, P., Kirsch, P., Tseng, H. H. & Jammy, R., 2009, 2009 Symposium on VLSI Technology, VLSIT 2009. p. 100-101 2 p. 5200648. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    12 Citations (Scopus)
  • The challenges in introducing PMOS dual channel in CMOS processing

    Harris, H. R., Majhi, P., Kirsch, P., Sivasubramani, P., Oh, J. W. & Song, S. C., 2009, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment. 1 ed. p. 223-231 9 p. (ECS Transactions; vol. 19, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • V th variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

    Lee, S. H., Huang, J., Majhi, P., Kirsch, P. D., Min, B. G., Park, C. S., Oh, J., Loh, W. Y., Kang, C. Y., Sassman, B., Hung, P. Y., McCoy, S., Chen, J., Wu, B., Moori, G., Heh, D., Young, C., Bersuker, G., Tseng, H. H., Banerjee, S. K. & 1 others, Jammy, R., 2009, 2009 Symposium on VLSI Technology, VLSIT 2009. p. 74-75 2 p. 5200639. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    19 Citations (Scopus)
  • 2008

    CMOS scaling for the next decade: Trends, challenges and opportunities

    Majhi, P., Oh, J., Lee, S. H., Harris, R., Tseng, H. H. & Jammy, R., 2008, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 253-262 10 p. (ECS Transactions; vol. 13, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

    Oh, J., Majhi, P., Lee, H., Yoo, O., Lee, S., Banerjee, S., Tseng, H. H. & Jammy, R., 2008, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. p. 40-41 2 p. 4530789. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)
  • High mobility and advanced channels materials

    Oh, J., Majhi, P. & Jammy, R., 2008, 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008. p. dxix-dlxiv 4690534. (16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Improvement of thermal stability and reduction of Schottky barrier height of Ni germanide utilizing Ni-Pt(1%) alloy on Ge-on-Si substrate

    Zhang, Y. Y., Oh, J. W., Han, I. S., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Shin, H. S., Choi, W. H., Lee, G. W., Wang, J. S., Majhi, P., Tseng, H. H. & Lee, H. D., 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 5418409. (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Low-voltage green transistor using ultra shallow junction and hetero-tunneling

    Bowonder, A., Patel, P., Jeon, K., Oh, J., Majhi, P., Tseng, H. H. & Hu, C., 2008, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. p. 93-96 4 p. 4540025. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    37 Citations (Scopus)
  • Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

    Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Price, J., Majhi, P., Harris, H. R., Gilmer, D. C., Kelly, D. Q., Sivasubramani, P., Bersuker, G., Heh, D., Young, C., Park, C. S., Tan, Y. N., Goel, N., Park, C., Hung, P. Y., Lysaght, P., Choi, K. J. & 4 others, Cho, B. J., Tseng, H. H., Lee, B. H. & Jammy, R., 2008, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. p. 82-83 2 p. 4588571. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    16 Citations (Scopus)
  • The challenges and progress of USJ formation & process integration for 32nm technology and beyond

    Tseng, H. H., Kalra, P., Oh, J., Majhi, P., Liu, T. J. K. & Jammy, R., 2008, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. p. 3-6 4 p. 4540005. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate

    Loh, W. Y., Majhi, P., Lee, S. H., Oh, J. W., Sassman, B., Young, C., Bersuker, G., Cho, B. J., Park, C. S., Kang, C. Y., Kirsch, P., Lee, B. H., Harris, H. R., Tseng, H. H. & Jammy, R., 2008, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. p. 56-57 2 p. 4588562. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    8 Citations (Scopus)
  • Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs

    Zhang, Y. Y., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Lee, G. W., Wang, J. S., Oh, J. W., Majhi, P., Tseng, H. H. & Lee, H. D., 2008, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. p. 158-161 4 p. 4540039. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2007

    Formation of shallow junctions using Ge-Si heterostructures for high mobility channel MOSFETs

    Oh, J., Majhi, P., Lee, H. D., Lee, K. T., Choi, W. H., Yang, J. W., Chang, Y. K., Harris, R., Song, S. C., Kalra, P., Lee, S., Banerjee, S., Byoung, H. L., Tseng, H. H. & Jammy, R., 2007, Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007. p. 55-60 6 p. 4279946. (Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)
  • 2006

    GE on SI photodiodes for SI cmos monolithic optical receivers

    Huang, Z., Oh, J. & Campbell, J. C., 2006, ECS Transactions - Integrated Optoelectronics 3. 39 ed. Electrochemical Society Inc., p. 1-10 10 p. (ECS Transactions; vol. 3, no. 39).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)
  • Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

    Huang, Z., Banerjee, S. K., Oh, J. & Campbell, J. C., 2006, 2006 Digest of the LEOS Summer Topical Meetings. p. 42-43 2 p. 1694059. (LEOS Summer Topical Meeting).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Single metal gate with dual work functions for FD-SOI and UTB double gate technologies

    Pham, D., Luan, H., Mathur, K., Sassman, B., Nguyen, B., Brown, G., Yang, J. W., Oh, J., Zeitzoff, P. & Larson, L., 2006 Jan 1, 2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 25-26 2 p. 4062862. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)
  • 2005

    Si and Si-compatible photodetectors

    Campbell, J. C., Huang, Z., Kong, N. & Oh, J., 2005, 2005 IEEE International Conference on Group IV Photonics. p. 183-185 3 p. 1516446. (2005 IEEE International Conference on Group IV Photonics; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2002

    Electrical activation of implanted single crystal germanium substrates

    Jasper, C., Rubin, L., Lindfors, C., Jones, K. S. & Oh, J., 2002, 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. Brown, B., Alford, T. L., Nastasi, M. & Vella, M. C. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 548-551 4 p. 1258063. (Proceedings of the International Conference on Ion Implantation Technology; vol. 22-27-September-2002).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    18 Citations (Scopus)