• 3854 Citations
  • 31 h-Index
19962020

Research output per year

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Research Output

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Conference contribution
2017

Time resolved terahertz spectroscopy of topological insulator Sb2Te3

Park, J., Choi, H., Jung, S., Kim, T. H., Chae, J., Park, H., Jeong, K. & Cho, M. H., 2017 Oct 12, 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE Computer Society, 8067147. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Terahertz spectroscopy of topological insulator Sb2Se3 and its ultrafast nonequilibrium carrier dynamics

Park, J., Kim, T. H., Jeong, K., Choi, H., Jung, S. & Cho, M. H., 2016 Nov 28, 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. IEEE Computer Society, 7758796. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

Ultrafast nonequilibrium carrier dynamics of 2D materials measured by time resolved THz spectroscopy

Park, J., Choi, H., Kim, T. H., Jung, S. & Cho, M. H., 2015 Nov 11, IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc., 7327796. (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Investigation of silicon-germanium nanowires THz emission

Balci, S., Lee, W. J., Wilbert, D. S., Kung, P., Kang, C., Cho, M. H. & Kim, S. M., 2014 Nov 13, 2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2014. IEEE Computer Society, 6956086. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems

Cho, Y. D., Suh, D. C., Ko, D. H., Lee, Y. & Cho, M. H., 2011 Dec 1, Physics and Technology of High-k Materials 9. 3 ed. p. 145-148 4 p. (ECS Transactions; vol. 41, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces

Cho, Y. D., Suh, D. C., Lee, Y., Ko, D. H., Chung, K. B. & Cho, M. H., 2010 Dec 30, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. p. 311-314 4 p. (ECS Transactions; vol. 28, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2009

The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs (100) surfaces

Suh, D. C., Cho, Y. D., Ko, D. H., Chung, K. B., Cho, M. H. & Lee, Y., 2009 Dec 1, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment. 1 ed. p. 233-239 7 p. (ECS Transactions; vol. 19, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2008

Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx

Yoo, J. H., Chang, H. J., Cho, M. H., Lee, T. W. & Ko, D. H., 2008 Nov 13, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 427-432 6 p. (ECS Transactions; vol. 13, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The study of hafnium silicate by various nitrogen gas annealing treatment

Dong, C. S., Kwun, B. C., Cho, M. H., Young, D. C. & Ko, D. H., 2008 Dec 1, Materials Science of High-K Dielectric Stacks - From Fundamentals to Technology. p. 68-72 5 p. (Materials Research Society Symposium Proceedings; vol. 1073).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The study of workfunction measurement method for bilayer metal gate electrode using XPS

Jung, E. J., Yim, C. J., Yang, I. S., Chang, H. J., Cho, S. W., Cho, M. H. & Ko, D. H., 2008, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 187-191 5 p. (ECS Transactions; vol. 13, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2007

Relaxation of strained Si1-xGexby dry oxidation

Min, B. G., Ko, D. H., Cho, M. H., Lee, T. W. & Choi, K. J., 2007 Dec 1, ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. p. 41-52 12 p. (ECS Transactions; vol. 6, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The study of hafnium silicate by NO gas annealing treatment

Suh, D. C., Lee, D., Chung, K. B., Cho, M. H. & Ko, D. H., 2007, ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. p. 129-139 11 p. (ECS Transactions; vol. 6, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2006

Analysis of thermal variation of dram retention time

Cho, M. H., Kim, Y. I., Woo, D. S., Kim, S. W., Shim, M. S., Park, Y. J., Lee, W. S. & Ryu, B. I., 2006 Dec 1, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 433-436 4 p. 4017198. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)
2005

Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application

Heo, J. H., Kim, D. C., Koo, B. Y., Kim, J. H., Kim, C. S., Noh, Y. J., Baek, S. K., Shin, Y. G., Chung, U. I., Moon, J. T., Cho, M. H., Chung, K. B. & Moon, D. W., 2005 Dec 1, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. p. 205-208 4 p. 1546621. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

High-density low-power-operating DRAM device adopting 6F2 cell scheme with novel S-RCAT structure on 80nm feature size and beyond

Oh, H. J., Kim, J. Y., Kim, J. H., Park, S. G., Kim, D. H., Kim, S. E., Woo, D. S., Lee, Y. S., Ha, G. W., Park, J. M., Kang, N. J., Kim, H. J., Hwang, Y. S., Kim, B. Y., Kim, D. I., Cho, Y. S., Choi, J. K., Lee, B. H., Kim, S. B., Cho, M. H. & 9 others, Kim, Y. I., Choi, J., Shin, D. W., Shim, M. S., Choi, W. T., Lee, G. P., Park, Y. J., Lee, W. S. & Ryu, B. I., 2005 Dec 1, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. p. 177-180 4 p. 1546614. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

Kim, J. Y., Woo, D. S., Oh, H. J., Kim, H. J., Kim, S. E., Park, B. J., Kwon, J. M., Shim, M. S., Ha, G. W., Song, J. W., Kang, N. J., Park, J. M., Hwang, H. K., Song, S. S., Hwang, Y. S., Kim, D. I., Kim, D. H., Huh, M., Han, D. H., Lee, C. S. & 13 others, Park, S. J., Kim, Y. R., Kim, H. J., Lee, Y. S., Jung, M. Y., Kim, Y. I., Lee, B. H., Cho, M. H., Choi, W. T., Kim, H. S., Jin, G. Y., Park, Y. J. & Kim, K., 2005 Oct 31, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. p. 33-34 2 p. T23. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)