Mann-Ho Cho

professor, Ph. D

  • Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
19962020

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  • 2017

    Time resolved terahertz spectroscopy of topological insulator Sb2Te3

    Park, J., Choi, H., Jung, S., Kim, T. H., Chae, J., Park, H., Jeong, K. & Cho, M. H., 2017 Oct 12, 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE Computer Society, 8067147. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2016

    Terahertz spectroscopy of topological insulator Sb2Se3 and its ultrafast nonequilibrium carrier dynamics

    Park, J., Kim, T. H., Jeong, K., Choi, H., Jung, S. & Cho, M. H., 2016 Nov 28, 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016. IEEE Computer Society, 7758796. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; vol. 2016-November).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2015

    Ultrafast nonequilibrium carrier dynamics of 2D materials measured by time resolved THz spectroscopy

    Park, J., Choi, H., Kim, T. H., Jung, S. & Cho, M. H., 2015 Nov 11, IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc., 7327796. (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2014

    Investigation of silicon-germanium nanowires THz emission

    Balci, S., Lee, W. J., Wilbert, D. S., Kung, P., Kang, C., Cho, M. H. & Kim, S. M., 2014 Nov 13, 2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2014. IEEE Computer Society, 6956086. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2011

    The NH 3 nitridation effects on a Al 2O 3 passivation by atomic layer deposition (ALD) in the HfO 2/GaAs systems

    Cho, Y. D., Suh, D. C., Ko, D. H., Lee, Y. & Cho, M. H., 2011, Physics and Technology of High-k Materials 9. 3 ed. p. 145-148 4 p. (ECS Transactions; vol. 41, no. 3).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2010

    Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces

    Cho, Y. D., Suh, D. C., Lee, Y., Ko, D. H., Chung, K. B. & Cho, M. H., 2010, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. p. 311-314 4 p. (ECS Transactions; vol. 28, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2009

    The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs (100) surfaces

    Suh, D. C., Cho, Y. D., Ko, D. H., Chung, K. B., Cho, M. H. & Lee, Y., 2009, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment. 1 ed. p. 233-239 7 p. (ECS Transactions; vol. 19, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2008

    Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx

    Yoo, J. H., Chang, H. J., Cho, M. H., Lee, T. W. & Ko, D. H., 2008, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 427-432 6 p. (ECS Transactions; vol. 13, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • The study of hafnium silicate by various nitrogen gas annealing treatment

    Dong, C. S., Kwun, B. C., Cho, M. H., Young, D. C. & Ko, D. H., 2008, Materials Science of High-K Dielectric Stacks - From Fundamentals to Technology. p. 68-72 5 p. (Materials Research Society Symposium Proceedings; vol. 1073).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • The study of workfunction measurement method for bilayer metal gate electrode using XPS

    Jung, E. J., Yim, C. J., Yang, I. S., Chang, H. J., Cho, S. W., Cho, M. H. & Ko, D. H., 2008, ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. p. 187-191 5 p. (ECS Transactions; vol. 13, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • 2007

    Relaxation of strained Si1-xGexby dry oxidation

    Min, B. G., Ko, D. H., Cho, M. H., Lee, T. W. & Choi, K. J., 2007, ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. p. 41-52 12 p. (ECS Transactions; vol. 6, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • The study of hafnium silicate by NO gas annealing treatment

    Suh, D. C., Lee, D., Chung, K. B., Cho, M. H. & Ko, D. H., 2007, ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. p. 129-139 11 p. (ECS Transactions; vol. 6, no. 1).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2006

    Analysis of thermal variation of dram retention time

    Cho, M. H., Kim, Y. I., Woo, D. S., Kim, S. W., Shim, M. S., Park, Y. J., Lee, W. S. & Ryu, B. I., 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 433-436 4 p. 4017198. (IEEE International Reliability Physics Symposium Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    8 Citations (Scopus)
  • 2005

    Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application

    Heo, J. H., Kim, D. C., Koo, B. Y., Kim, J. H., Kim, C. S., Noh, Y. J., Baek, S. K., Shin, Y. G., Chung, U. I., Moon, J. T., Cho, M. H., Chung, K. B. & Moon, D. W., 2005, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. p. 205-208 4 p. 1546621. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)
  • High-density low-power-operating DRAM device adopting 6F2 cell scheme with novel S-RCAT structure on 80nm feature size and beyond

    Oh, H. J., Kim, J. Y., Kim, J. H., Park, S. G., Kim, D. H., Kim, S. E., Woo, D. S., Lee, Y. S., Ha, G. W., Park, J. M., Kang, N. J., Kim, H. J., Hwang, Y. S., Kim, B. Y., Kim, D. I., Cho, Y. S., Choi, J. K., Lee, B. H., Kim, S. B., Cho, M. H. & 9 others, Kim, Y. I., Choi, J., Shin, D. W., Shim, M. S., Choi, W. T., Lee, G. P., Park, Y. J., Lee, W. S. & Ryu, B. I., 2005, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. p. 177-180 4 p. 1546614. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    6 Citations (Scopus)
  • The excellent scalability of the RCAT(Recess-Channel-Array-Transistor) technology for sub-70nm DRAM feature size and beyond

    Kim, J. Y., Woo, D. S., Oh, H. J., Kim, H. J., Kim, S. E., Park, B. J., Kwon, J. M., Shim, M. S., Ha, G. W., Song, J. W., Kang, N. J., Park, J. M., Hwang, H. K., Song, S. S., Hwang, Y. S., Kim, D. I., Kim, D. H., Huh, M., Han, D. H., Lee, C. S. & 13 others, Park, S. J., Kim, Y. R., Kim, H. J., Lee, Y. S., Jung, M. Y., Kim, Y. I., Lee, B. H., Cho, M. H., Choi, W. T., Kim, H. S., Jin, G. Y., Park, Y. J. & Kim, K., 2005, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. p. 33-34 2 p. T23. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    6 Citations (Scopus)