Seongil Im

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11620 Citations
54 h-Index
288 Article
28 Conference article
19 Conference contribution
3 Letter
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- 2 Review article
- 1 Comment/debate

2D MoS₂ Charge Injection Memory Transistors Utilizing Hetero-Stack SiO₂/HfO₂ Dielectrics and Oxide Interface Traps
Widiapradja, L. J., Nam, T., Jeong, Y., Jin, H. J., Lee, Y., Kim, K., Lee, S., Kim, H., Bae, H. & Im, S., 2021 May, In: Advanced Electronic Materials. 7, 5, 2100074.
Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus)
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS₂Field Effect Transistors
Cho, H., Kang, D., Lee, Y., Bae, H., Hong, S., Cho, Y., Kim, K., Yi, Y., Park, J. H. & Im, S., 2021 Apr 28, In: Nano letters. 21, 8, p. 3503-3510 8 p.
Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus)
Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes
Choi, W., Hong, S., Jeong, Y., Cho, Y., Shin, H. G., Park, J. H., Yi, Y. & Im, S., 2021 Feb 24, In: Advanced Functional Materials. 31, 9, 2009436.
Research output: Contribution to journal › Article › peer-review
6 Citations (Scopus)
High Performance β-Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂
Kim, K. T., Jin, H. J., Choi, W., Jeong, Y., Shin, H. G., Lee, Y., Kim, K. & Im, S., 2021 May 21, In: Advanced Functional Materials. 31, 21, 2010303.
Research output: Contribution to journal › Article › peer-review
3 Citations (Scopus)
Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe₂ channel and ferroelectric P(VDF-TrFE)
Cho, Y., Cho, H., Hong, S., Kang, D., Yi, Y., Park, C., Park, J. H. & Im, S., 2021 Mar, In: Nano Energy. 81, 105686.
Research output: Contribution to journal › Article › peer-review

Seongil Im

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2D MoS₂ Charge Injection Memory Transistors Utilizing Hetero-Stack SiO₂/HfO₂ Dielectrics and Oxide Interface Traps

Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS₂Field Effect Transistors

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

High Performance β-Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe₂ channel and ferroelectric P(VDF-TrFE)

Seongil Im

Fingerprint

Network

Research output

2D MoS2 Charge Injection Memory Transistors Utilizing Hetero-Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps

Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2Field Effect Transistors

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)

2D MoS₂ Charge Injection Memory Transistors Utilizing Hetero-Stack SiO₂/HfO₂ Dielectrics and Oxide Interface Traps

Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS₂Field Effect Transistors

High Performance β-Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe₂ channel and ferroelectric P(VDF-TrFE)