Research output per year
Research output per year
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Dive into the research topics where Seongil Im is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Research output
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2D MoS2 Charge Injection Memory Transistors Utilizing Hetero-Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps
Widiapradja, L. J., Nam, T., Jeong, Y., Jin, H. J., Lee, Y., Kim, K., Lee, S., Kim, H., Bae, H. & Im, S., 2021 May, In: Advanced Electronic Materials. 7, 5, 2100074.Research output: Contribution to journal › Article › peer-review
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Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2Field Effect Transistors
Cho, H., Kang, D., Lee, Y., Bae, H., Hong, S., Cho, Y., Kim, K., Yi, Y., Park, J. H. & Im, S., 2021 Apr 28, In: Nano letters. 21, 8, p. 3503-3510 8 p.Research output: Contribution to journal › Article › peer-review
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Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes
Choi, W., Hong, S., Jeong, Y., Cho, Y., Shin, H. G., Park, J. H., Yi, Y. & Im, S., 2021 Feb 24, In: Advanced Functional Materials. 31, 9, 2009436.Research output: Contribution to journal › Article › peer-review
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High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2
Kim, K. T., Jin, H. J., Choi, W., Jeong, Y., Shin, H. G., Lee, Y., Kim, K. & Im, S., 2021 May 21, In: Advanced Functional Materials. 31, 21, 2010303.Research output: Contribution to journal › Article › peer-review
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Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)
Cho, Y., Cho, H., Hong, S., Kang, D., Yi, Y., Park, C., Park, J. H. & Im, S., 2021 Mar, In: Nano Energy. 81, 105686.Research output: Contribution to journal › Article › peer-review