Research output per year
Research output per year
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Dive into the research topics where Seongil Im is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Research output
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Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes
Choi, W., Hong, S., Jeong, Y., Cho, Y., Shin, H. G., Park, J. H., Yi, Y. & Im, S., 2021 Feb 24, In: Advanced Functional Materials. 31, 9, 2009436.Research output: Contribution to journal › Article › peer-review
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High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2
Kim, K. T., Jin, H. J., Choi, W., Jeong, Y., Shin, H. G., Lee, Y., Kim, K. & Im, S., 2021, (Accepted/In press) In: Advanced Functional Materials.Research output: Contribution to journal › Article › peer-review
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Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)
Cho, Y., Cho, H., Hong, S., Kang, D., Yi, Y., Park, C., Park, J. H. & Im, S., 2021 Mar, In: Nano Energy. 81, 105686.Research output: Contribution to journal › Article › peer-review
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2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications
Kim, T., Kang, D., Lee, Y., Hong, S., Shin, H. G., Bae, H., Yi, Y., Kim, K. & Im, S., 2020 Oct 1, In: Advanced Functional Materials. 30, 40, 2004140.Research output: Contribution to journal › Article › peer-review
7 Citations (Scopus) -
Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe2
Hong, S., Kim, K. L., Cho, Y., Cho, H., Park, J. H., Park, C. & Im, S., 2020 Sep 1, In: Advanced Electronic Materials. 6, 9, 2000479.Research output: Contribution to journal › Article › peer-review
3 Citations (Scopus)