(100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs

L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, X. C. Zhang, S. K. Chang, A. V. Nurmikko

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Abstract

This letter reports the first growth of (100) CdTe-CdMnTe superlattices. In the past (111) superlattices of CdTe-CdMnTe were grown on (100) GaAs substrates. To consistently achieve the desired (100) epitaxy, three different growth techniques are described. Reflection high-energy electron diffraction is used to observe the initial nucleation of the (100) CdTe film, while transmission electron microscopy is used to investigate the nature of the interface between the epitaxial film and the substrate. The optical properties of these superlattices show interesting differences with the (111) superlattices.

Original languageEnglish
Pages (from-to)882-884
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number8
DOIs
Publication statusPublished - 1985 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kolodziejski, L. A., Gunshor, R. L., Otsuka, N., Zhang, X. C., Chang, S. K., & Nurmikko, A. V. (1985). (100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs. Applied Physics Letters, 47(8), 882-884. https://doi.org/10.1063/1.95964