@inproceedings{c1d95816bf7a4b19bfe8db18cac91bd9,
title = "12.5-Gb/s monolithically integrated optical receiver with CMOS avalanche photodetector",
abstract = "We present a 12.5-Gb/s monolithically integrated optical receiver with CMOS avalanche photodetector (CMOS-APD) realized in 65-nm CMOS technology. The optical detection bandwidth limitation of CMOS-APD due to the carrier transit time is compensated by underdamped TIA. With this optical receiver, 12.5-Gb/s 850-nm optical data are successfully detected with bit-error rate less than 10-12 at the incident optical power of -2 dBm. The fabricated optical receiver has the core size of 0.24 × 0.1 mm2 and its power consumption excluding output buffer is about 13.7 mW with 1.2-V supply voltage.",
author = "Jung, {Hyun Yong} and Lee, {Jeong Min} and Youn, {Jin Sung} and Choi, {Woo Young} and Lee, {Myung Jae}",
year = "2015",
month = apr,
day = "16",
doi = "10.1109/ISOCC.2014.7087543",
language = "English",
series = "ISOCC 2014 - International SoC Design Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "ISOCC 2014 - International SoC Design Conference",
address = "United States",
note = "11th International SoC Design Conference, ISOCC 2014 ; Conference date: 03-11-2014 Through 06-11-2014",
}