We demonstrated 2.2inch qq VGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as interdielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2006|
|Event||44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States|
Duration: 2006 Jun 4 → 2006 Jun 9
All Science Journal Classification (ASJC) codes