2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Jang Yeon Kwon, Ji Sim Jung, Kyung Bae Park, Jong Man Kim, Hyuck Lim, Sang Yoon Lee, Jong Min Kim, Takashi Noguchi, Ji Ho Hur, Jin Jang

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We demonstrated 2.2inch qq VGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as interdielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

Original languageEnglish
Pages (from-to)1333-1336
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume37
Issue number3
Publication statusPublished - 2006
Event44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States
Duration: 2006 Jun 42006 Jun 9

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kwon, J. Y., Jung, J. S., Park, K. B., Kim, J. M., Lim, H., Lee, S. Y., Kim, J. M., Noguchi, T., Hur, J. H., & Jang, J. (2006). 2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C. Digest of Technical Papers - SID International Symposium, 37(3), 1333-1336.