2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Kwon Jang Yeon, Sim Jung Ji, Bae Park Kyung, Man Kim Jong, Lim Hyuck, Yoon Lee Sang, Min Kim Jong, Takashi Noguchi, Ho Hur Ji, Jang Jin

Research output: Contribution to journalConference article

Abstract

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

Original languageEnglish
Pages (from-to)309-313
Number of pages5
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006 Dec 1
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 2006 Aug 222006 Aug 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Jang Yeon, K., Ji, S. J., Kyung, B. P., Jong, M. K., Hyuck, L., Sang, Y. L., Jong, M. K., Noguchi, T., Ji, H. H., & Jin, J. (2006). 2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C. Proceedings of International Meeting on Information Display, 2006, 309-313.