2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

Kwon Jang Yeon, Sim Jung Ji, Bae Park Kyung, Man Kim Jong, Lim Hyuck, Yoon Lee Sang, Min Kim Jong, Takashi Noguchi, Ho Hur Ji, Jang Jin

Research output: Contribution to journalConference article

Abstract

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

Original languageEnglish
Pages (from-to)309-313
Number of pages5
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006 Dec 1

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Silicon
Plastics
Plasma CVD
Organic light emitting diodes (OLED)
Inductively coupled plasma
Polysilicon
Passivation
Temperature
Display devices
Impurities
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jang Yeon, Kwon ; Ji, Sim Jung ; Kyung, Bae Park ; Jong, Man Kim ; Hyuck, Lim ; Sang, Yoon Lee ; Jong, Min Kim ; Noguchi, Takashi ; Ji, Ho Hur ; Jin, Jang. / 2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C. In: Proceedings of International Meeting on Information Display. 2006 ; Vol. 2006. pp. 309-313.
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abstract = "We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.",
author = "{Jang Yeon}, Kwon and Ji, {Sim Jung} and Kyung, {Bae Park} and Jong, {Man Kim} and Lim Hyuck and Sang, {Yoon Lee} and Jong, {Min Kim} and Takashi Noguchi and Ji, {Ho Hur} and Jang Jin",
year = "2006",
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Jang Yeon, K, Ji, SJ, Kyung, BP, Jong, MK, Hyuck, L, Sang, YL, Jong, MK, Noguchi, T, Ji, HH & Jin, J 2006, '2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C', Proceedings of International Meeting on Information Display, vol. 2006, pp. 309-313.

2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C. / Jang Yeon, Kwon; Ji, Sim Jung; Kyung, Bae Park; Jong, Man Kim; Hyuck, Lim; Sang, Yoon Lee; Jong, Min Kim; Noguchi, Takashi; Ji, Ho Hur; Jin, Jang.

In: Proceedings of International Meeting on Information Display, Vol. 2006, 01.12.2006, p. 309-313.

Research output: Contribution to journalConference article

TY - JOUR

T1 - 2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below 200°C

AU - Jang Yeon, Kwon

AU - Ji, Sim Jung

AU - Kyung, Bae Park

AU - Jong, Man Kim

AU - Hyuck, Lim

AU - Sang, Yoon Lee

AU - Jong, Min Kim

AU - Noguchi, Takashi

AU - Ji, Ho Hur

AU - Jin, Jang

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

AB - We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below 200°C. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over 20 cm2/Vsec was fabricated on transparent plastic substrate and drived OLED display successfully.

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M3 - Conference article

VL - 2006

SP - 309

EP - 313

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

SN - 1738-7558

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