We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2007 Jan 1|
|Event||2007 SID International Symposium - Long Beach, CA, United States|
Duration: 2007 May 23 → 2007 May 25
All Science Journal Classification (ASJC) codes