2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

Ji Sim Jung, Kyung Bae Park, Myung Kwan Ryu, Sang Yoon Lee, Jong Min Kim, Jang Yeon Kwon

Research output: Contribution to journalConference article

Abstract

We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

Original languageEnglish
Pages (from-to)1584-1587
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume38
Issue number2
Publication statusPublished - 2007 Aug 22

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Threshold voltage
Chemical vapor deposition
Capacitance
Pixels
Display devices
Temperature
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jung, Ji Sim ; Park, Kyung Bae ; Ryu, Myung Kwan ; Lee, Sang Yoon ; Kim, Jong Min ; Kwon, Jang Yeon. / 2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature. In: Digest of Technical Papers - SID International Symposium. 2007 ; Vol. 38, No. 2. pp. 1584-1587.
@article{a033280877434db1bd85211cb8153ced,
title = "2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature",
abstract = "We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.",
author = "Jung, {Ji Sim} and Park, {Kyung Bae} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Kim, {Jong Min} and Kwon, {Jang Yeon}",
year = "2007",
month = "8",
day = "22",
language = "English",
volume = "38",
pages = "1584--1587",
journal = "Digest of Technical Papers - SID International Symposium",
issn = "0097-966X",
number = "2",

}

2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature. / Jung, Ji Sim; Park, Kyung Bae; Ryu, Myung Kwan; Lee, Sang Yoon; Kim, Jong Min; Kwon, Jang Yeon.

In: Digest of Technical Papers - SID International Symposium, Vol. 38, No. 2, 22.08.2007, p. 1584-1587.

Research output: Contribution to journalConference article

TY - JOUR

T1 - 2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

AU - Jung, Ji Sim

AU - Park, Kyung Bae

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

AU - Kim, Jong Min

AU - Kwon, Jang Yeon

PY - 2007/8/22

Y1 - 2007/8/22

N2 - We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

AB - We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

UR - http://www.scopus.com/inward/record.url?scp=34547938691&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547938691&partnerID=8YFLogxK

M3 - Conference article

VL - 38

SP - 1584

EP - 1587

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 2

ER -