2.2 Inch qqVGA AMOLED driven by Si TFT with active layer deposited at room temperature

Ji Sim Jung, Kyung Bae Park, Myung Kwan Ryu, Sang Yoon Lee, Jong Min Kim, Jang Yeon Kwon

Research output: Contribution to journalConference article

Abstract

We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. OurR.T. Si TFT showed a field-effect mobility of 0.07cm2/Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on-off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.

Original languageEnglish
Pages (from-to)1584-1587
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume38
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1
Event2007 SID International Symposium - Long Beach, CA, United States
Duration: 2007 May 232007 May 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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