Abstract
We present a 25-Gb/s optical transmitter composed of a Si ring modulator and CMOS driver circuit. The Si ring modulator is realized with 220-nm Si-on-insulator process and the driver circuit with 65-nm CMOS process. The modulator and the driver are hybrid-integrated on the printed circuit board with bonding wires. The driver is designed so that the parasitic bonding wire inductance provides enhanced driver bandwidth. The transmitter successfully demonstrates 25-Gb/s operation.
| Original language | English |
|---|---|
| Pages (from-to) | 564-568 |
| Number of pages | 5 |
| Journal | Journal of the Optical Society of Korea |
| Volume | 18 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
Cite this
}
25-Gb/s optical transmitter with Si ring modulator and CMOS driver. / Rhim, Jinsoo; Lee, Jeong Min; Yu, Byung Min; Ban, Yoojin; Cho, Seong Ho; Choi, Woo Young.
In: Journal of the Optical Society of Korea, Vol. 18, No. 5, 01.01.2014, p. 564-568.Research output: Contribution to journal › Article
TY - JOUR
T1 - 25-Gb/s optical transmitter with Si ring modulator and CMOS driver
AU - Rhim, Jinsoo
AU - Lee, Jeong Min
AU - Yu, Byung Min
AU - Ban, Yoojin
AU - Cho, Seong Ho
AU - Choi, Woo Young
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We present a 25-Gb/s optical transmitter composed of a Si ring modulator and CMOS driver circuit. The Si ring modulator is realized with 220-nm Si-on-insulator process and the driver circuit with 65-nm CMOS process. The modulator and the driver are hybrid-integrated on the printed circuit board with bonding wires. The driver is designed so that the parasitic bonding wire inductance provides enhanced driver bandwidth. The transmitter successfully demonstrates 25-Gb/s operation.
AB - We present a 25-Gb/s optical transmitter composed of a Si ring modulator and CMOS driver circuit. The Si ring modulator is realized with 220-nm Si-on-insulator process and the driver circuit with 65-nm CMOS process. The modulator and the driver are hybrid-integrated on the printed circuit board with bonding wires. The driver is designed so that the parasitic bonding wire inductance provides enhanced driver bandwidth. The transmitter successfully demonstrates 25-Gb/s operation.
UR - http://www.scopus.com/inward/record.url?scp=84928107963&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84928107963&partnerID=8YFLogxK
U2 - 10.3807/JOSK.2014.18.5.564
DO - 10.3807/JOSK.2014.18.5.564
M3 - Article
AN - SCOPUS:84928107963
VL - 18
SP - 564
EP - 568
JO - Journal of the Optical Society of Korea
JF - Journal of the Optical Society of Korea
SN - 1226-4776
IS - 5
ER -