2D transition metal dichalcogenides (TMDs) have been extensively studied due to their excellent physical properties. Mixed dimensional devices including 2D materials have also been studied, motivated by the possibility of any synergy effect from unique structures. However, only few such studies have been conducted. Here, semiconducting 1D ZnO nanowires are used as thin gate material to support 2D TMD field effect transistors (FETs) and 2D stack-based interface trap nonvolatile memory. For the trap memory, deep level electron traps formed at the first MoS2/second MoS2 stack interface are exploited, since the first MoS2 is treated in an atomic layer deposition chamber for a short while. On the one hand, a complementary inverter type memory device can also be achieved using a long single ZnO wire as a common gate to simultaneously support both n- and p-channel TMD FETs. In addition, it is found that the semiconducting ZnO nanowire itself operates as an n-type channel when the TMD materials can become a top-gate to charge the ZnO channel. It means that 2D (bottom gated) and 1D channel (top gated) FETs are respectively operational in a single device structure. The 1D–2D mixed devices seem deserving broad attention in both aspects of novelty and functionality.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from SRC program (Grant No. 2017R1A5A1014862, vdWMRC center) and the Creative Materials Discovery Program (2015M3D1A1068061) administered by the National Research Foundation of Korea (NRF) and funded by the Ministry of Science and ICT, Republic of Korea. H.B. acknowledges this financial support from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF‐ 2020R1I1A1A01052216).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics