Abstract
We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in 0.25-μm SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down- conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.
| Original language | English |
|---|---|
| Pages (from-to) | 256-261 |
| Number of pages | 6 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 11 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Dec |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Ko, M., Kim, D., Rücker, H., & Choi, W. Y. (2011). 3-Gb/s 60-GHz link with SiGe BiCMOS receiver front-end and CMOS mixed-mode QPSK demodulator. Journal of Semiconductor Technology and Science, 11(4), 256-261. https://doi.org/10.5573/JSTS.2011.11.4.256