3-Gb/s 60-GHz link with SiGe BiCMOS receiver front-end and CMOS mixed-mode QPSK demodulator

Minsu Ko; Duho Kim; Holger Rücker; Woo Young Choi

doi:10.5573/JSTS.2011.11.4.256

3-Gb/s 60-GHz link with SiGe BiCMOS receiver front-end and CMOS mixed-mode QPSK demodulator

Minsu Ko, Duho Kim, Holger Rücker, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in 0.25-μm SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down- conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.

Original language	English
Pages (from-to)	256-261
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	11
Issue number	4
DOIs	https://doi.org/10.5573/JSTS.2011.11.4.256
Publication status	Published - 2011 Dec

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Ko, M., Kim, D., Rücker, H., & Choi, W. Y. (2011). 3-Gb/s 60-GHz link with SiGe BiCMOS receiver front-end and CMOS mixed-mode QPSK demodulator. Journal of Semiconductor Technology and Science, 11(4), 256-261. https://doi.org/10.5573/JSTS.2011.11.4.256

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10.5573/JSTS.2011.11.4.256