Abstract
We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in 0.25-μm SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down- conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.
| Original language | English |
|---|---|
| Pages (from-to) | 256-261 |
| Number of pages | 6 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 11 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Dec |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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3-Gb/s 60-GHz link with SiGe BiCMOS receiver front-end and CMOS mixed-mode QPSK demodulator. / Ko, Minsu; Kim, Duho; Rücker, Holger; Choi, Woo Young.
In: Journal of Semiconductor Technology and Science, Vol. 11, No. 4, 12.2011, p. 256-261.Research output: Contribution to journal › Article
TY - JOUR
T1 - 3-Gb/s 60-GHz link with SiGe BiCMOS receiver front-end and CMOS mixed-mode QPSK demodulator
AU - Ko, Minsu
AU - Kim, Duho
AU - Rücker, Holger
AU - Choi, Woo Young
PY - 2011/12
Y1 - 2011/12
N2 - We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in 0.25-μm SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down- conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.
AB - We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in 0.25-μm SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down- conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.
UR - http://www.scopus.com/inward/record.url?scp=84855443699&partnerID=8YFLogxK
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U2 - 10.5573/JSTS.2011.11.4.256
DO - 10.5573/JSTS.2011.11.4.256
M3 - Article
AN - SCOPUS:84855443699
VL - 11
SP - 256
EP - 261
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
SN - 1598-1657
IS - 4
ER -