Abstract
In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.
| Original language | English |
|---|---|
| Pages (from-to) | 476-478 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 42 1 |
| Publication status | Published - 2011 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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35.2 : High-performance solution-processed oxide TFT with dual channel at low temperature. / Jeong, Woong Hee; Kim, Kyung Min; Kim, Dong Lim; Rim, You Seung; Kim, Hyun Jae; Park, Kyung Bae; Ryu, Myung Kwan.
In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 476-478.Research output: Contribution to journal › Article
TY - JOUR
T1 - 35.2
T2 - High-performance solution-processed oxide TFT with dual channel at low temperature
AU - Jeong, Woong Hee
AU - Kim, Kyung Min
AU - Kim, Dong Lim
AU - Rim, You Seung
AU - Kim, Hyun Jae
AU - Park, Kyung Bae
AU - Ryu, Myung Kwan
PY - 2011/6/1
Y1 - 2011/6/1
N2 - In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.
AB - In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.
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M3 - Article
AN - SCOPUS:84863214415
VL - 42 1
SP - 476
EP - 478
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
SN - 0097-966X
ER -