35.2

High-performance solution-processed oxide TFT with dual channel at low temperature

Woong Hee Jeong, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Hyun Jae Kim, Kyung Bae Park, Myung Kwan Ryu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat ) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm 2 /Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.

Original languageEnglish
Pages (from-to)476-478
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

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Thin film transistors
Oxide films
Threshold voltage
Carrier concentration
Charge transfer
Thin films
Temperature
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jeong, Woong Hee ; Kim, Kyung Min ; Kim, Dong Lim ; Rim, You Seung ; Kim, Hyun Jae ; Park, Kyung Bae ; Ryu, Myung Kwan. / 35.2 : High-performance solution-processed oxide TFT with dual channel at low temperature. In: Digest of Technical Papers - SID International Symposium. 2011 ; Vol. 42 1. pp. 476-478.
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35.2 : High-performance solution-processed oxide TFT with dual channel at low temperature. / Jeong, Woong Hee; Kim, Kyung Min; Kim, Dong Lim; Rim, You Seung; Kim, Hyun Jae; Park, Kyung Bae; Ryu, Myung Kwan.

In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 476-478.

Research output: Contribution to journalArticle

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