Abstract
In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm 2/Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.
| Original language | English |
|---|---|
| Pages (from-to) | 476-478 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 42 1 |
| Publication status | Published - 2011 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Jeong, W. H., Kim, K. M., Kim, D. L., Rim, Y. S., Kim, H. J., Park, K. B., & Ryu, M. K. (2011). 35.2: High-performance solution-processed oxide TFT with dual channel at low temperature. Digest of Technical Papers - SID International Symposium, 42 1, 476-478.