35.2: High-performance solution-processed oxide TFT with dual channel at low temperature

Woong Hee Jeong; Kyung Min Kim; Dong Lim Kim; You Seung Rim; Hyun Jae Kim; Kyung Bae Park; Myung Kwan Ryu

doi:10.1889/1.3621359

35.2: High-performance solution-processed oxide TFT with dual channel at low temperature

Woong Hee Jeong, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Hyun Jae Kim, Kyung Bae Park, Myung Kwan Ryu

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ_sat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm²/Vs, V_th of 0.35 V, and on/off ratio of over 10⁶ at 350°C.

Original language	English
Pages (from-to)	476-478
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	42 1
DOIs	https://doi.org/10.1889/1.3621359
Publication status	Published - 2011 Jun

All Science Journal Classification (ASJC) codes

Engineering(all)

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@article{80d831e9493a4272af7665b4fa9b8865,

title = "35.2: High-performance solution-processed oxide TFT with dual channel at low temperature",

abstract = "In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μsat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm2/Vs, Vth of 0.35 V, and on/off ratio of over 106 at 350°C.",

author = "Jeong, {Woong Hee} and Kim, {Kyung Min} and Kim, {Dong Lim} and Rim, {You Seung} and Kim, {Hyun Jae} and Park, {Kyung Bae} and Ryu, {Myung Kwan}",

year = "2011",

month = jun,

doi = "10.1889/1.3621359",

language = "English",

volume = "42 1",

pages = "476--478",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

}

TY - JOUR

T1 - 35.2

T2 - High-performance solution-processed oxide TFT with dual channel at low temperature

AU - Jeong, Woong Hee

AU - Kim, Kyung Min

AU - Kim, Dong Lim

AU - Rim, You Seung

AU - Kim, Hyun Jae

AU - Park, Kyung Bae

AU - Ryu, Myung Kwan

PY - 2011/6

Y1 - 2011/6

N2 - In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μsat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm2/Vs, Vth of 0.35 V, and on/off ratio of over 106 at 350°C.

AB - In this study, we investigated solution-processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μsat) and thick AIZO channel could also regulate the conductance for proper threshold voltage (Vth). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with sat of 5.02 cm2/Vs, Vth of 0.35 V, and on/off ratio of over 106 at 350°C.

UR - http://www.scopus.com/inward/record.url?scp=84863214415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863214415&partnerID=8YFLogxK

U2 - 10.1889/1.3621359

DO - 10.1889/1.3621359

M3 - Article

AN - SCOPUS:84863214415

VL - 42 1

SP - 476

EP - 478

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

ER -

35.2: High-performance solution-processed oxide TFT with dual channel at low temperature

Abstract

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