400 element ErAs:InGaAs/InGaAlAs superlattice power generator

Gehong Zeng, Je Hyeong Bahk, John E. Bowers, Joshua M.O. Zide, Arthur C. Gossard, Yan Zhang, Rajeev Singh, Zhixi Bian, Ali Shakouri, Woochul Kim, Suzanne Singer, Arun Majumdar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 μm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 μm thick and 200 μm × 200 μm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages499-506
Number of pages8
Publication statusPublished - 2006 May 8
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume886
ISSN (Print)0272-9172

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/1

Fingerprint

electric generators
generators
Erbium
Thin films
Seebeck coefficient
Superlattices
Seebeck effect
Phonons
thin films
Charge carriers
Molecular beam epitaxy
resistors
Resistors
erbium
suggestion
superlattices
charge carriers
Thermal conductivity
temperature gradients
phonons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zeng, G., Bahk, J. H., Bowers, J. E., Zide, J. M. O., Gossard, A. C., Zhang, Y., ... Majumdar, A. (2006). 400 element ErAs:InGaAs/InGaAlAs superlattice power generator. In Materials Research Society Symposium Proceedings (pp. 499-506). (Materials Research Society Symposium Proceedings; Vol. 886).
Zeng, Gehong ; Bahk, Je Hyeong ; Bowers, John E. ; Zide, Joshua M.O. ; Gossard, Arthur C. ; Zhang, Yan ; Singh, Rajeev ; Bian, Zhixi ; Shakouri, Ali ; Kim, Woochul ; Singer, Suzanne ; Majumdar, Arun. / 400 element ErAs:InGaAs/InGaAlAs superlattice power generator. Materials Research Society Symposium Proceedings. 2006. pp. 499-506 (Materials Research Society Symposium Proceedings).
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abstract = "We report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 μm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 μm thick and 200 μm × 200 μm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.",
author = "Gehong Zeng and Bahk, {Je Hyeong} and Bowers, {John E.} and Zide, {Joshua M.O.} and Gossard, {Arthur C.} and Yan Zhang and Rajeev Singh and Zhixi Bian and Ali Shakouri and Woochul Kim and Suzanne Singer and Arun Majumdar",
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Zeng, G, Bahk, JH, Bowers, JE, Zide, JMO, Gossard, AC, Zhang, Y, Singh, R, Bian, Z, Shakouri, A, Kim, W, Singer, S & Majumdar, A 2006, 400 element ErAs:InGaAs/InGaAlAs superlattice power generator. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 886, pp. 499-506, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 05/11/28.

400 element ErAs:InGaAs/InGaAlAs superlattice power generator. / Zeng, Gehong; Bahk, Je Hyeong; Bowers, John E.; Zide, Joshua M.O.; Gossard, Arthur C.; Zhang, Yan; Singh, Rajeev; Bian, Zhixi; Shakouri, Ali; Kim, Woochul; Singer, Suzanne; Majumdar, Arun.

Materials Research Society Symposium Proceedings. 2006. p. 499-506 (Materials Research Society Symposium Proceedings; Vol. 886).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 μm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 μm thick and 200 μm × 200 μm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.

AB - We report the fabrication and characterization of thin film power generators composed 400 p- and n-type ErAs:InGaAs/InGaAlAs superlattice thermoelectric elements. The thermoelectric elements incorporate erbium arsenide metallic nanoparticles into the semiconductor superlattice structure to provide charge carriers and create scattering centers for phonons. 10 μm p- and n-type InGaAs/InGaAlAs superlattices with embedded ErAs nano-particles were grown on InP substrates using molecular beam epitaxy. Thermal conductivity values were measured using the 3ω method and cross-plane Seebeck coefficients were determined using Seebeck device test patterns. 400 element ErAs:InGaAs/InGaAlAs thin film power generators were fabricated from superlattice elements 10 μm thick and 200 μm × 200 μm in area. The output power was 4.7 milliwatts for an external electrical load resistor of 150 Ω at about 80 K temperature difference drop across the generator. We discuss the limitations to the generator's performance and provide suggestions for further improvement.

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Zeng G, Bahk JH, Bowers JE, Zide JMO, Gossard AC, Zhang Y et al. 400 element ErAs:InGaAs/InGaAlAs superlattice power generator. In Materials Research Society Symposium Proceedings. 2006. p. 499-506. (Materials Research Society Symposium Proceedings).