50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD

Chul Lae Cho, Sung Hyun Lee, Chang Hoon Lee, Dea Hyun Lee, Sang Yoon Lee, Jang Yeon Kwon, Kyung Bae Park, Jong Man Kim, Ji Sim Jung, Wan Snick Hong

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.

Original languageEnglish
Pages (from-to)495-498
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006 Dec 1
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 2006 Aug 222006 Aug 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of '50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD'. Together they form a unique fingerprint.

  • Cite this

    Cho, C. L., Lee, S. H., Lee, C. H., Lee, D. H., Lee, S. Y., Kwon, J. Y., Park, K. B., Kim, J. M., Jung, J. S., & Hong, W. S. (2006). 50 nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD. Proceedings of International Meeting on Information Display, 2006, 495-498.