The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature (<200°C) using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content (∼0.9%) and a high deposition rate (∼35 Å/see). The film is applicable to thin film transistors on plastic substrates.
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006 Dec 1|
|Event||IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of|
Duration: 2006 Aug 22 → 2006 Aug 25
All Science Journal Classification (ASJC) codes