5∼6 GHz-band GaAs MESFET-based cross-coupled differential oscillator MMICs with low phase-noise performance

Sang Woong Yoon; Eun Chul Park; Chang Ho Lee; Sanghoon Sim; Sang Goog Lee; Euisik Yoon; Joy Laskar; Songcheol Hong

doi:10.1109/7260.974557

5∼6 GHz-band GaAs MESFET-based cross-coupled differential oscillator MMICs with low phase-noise performance

Sang Woong Yoon, Eun Chul Park, Chang Ho Lee, Sanghoon Sim, Sang Goog Lee, Euisik Yoon, Joy Laskar, Songcheol Hong

Yonsei Advanced Science Institute

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

LC-tank oscillators in the 5∼6 GHz frequency range have been designed and implemented in a commercial 0.6 μm GaAs MESFET technology. One is a voltage-controlled oscillator (VCO), and the other is an oscillator without a controlling element. The output frequency range of the VCO is from 5.44 to 6.14 GHz, and the measured phase-noise is -101.67 dBc/Hz at an offset frequency of 600 KHz from the 5.44 GHz carrier. The phase-noise of the 6.44 GHz oscillator is - 108 dBc/Hz at an offset frequency of 600 KHz, and the phase-noise curve, in the offset frequency range between 100 KHz and 1 MHz, shows a - 20 dB/decade slope. These phase-noise characteristics are comparable to, or better than, those of the reported 5∼6 GHz-band CMOS oscillators. To our knowledge, this is the first GaAs MESFET-based oscillator which has a cross-coupled differential topology and a capacitive coupling feedback to suppress the up-conversion of 1/f noise. Also, it is first reported that the GaAs MESFET-based oscillator shows 1/f ² phase-noise behavior across the offset frequency range from 100 KHz to 1 MHz.

Original language	English
Pages (from-to)	495-497
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1109/7260.974557
Publication status	Published - 2001 Dec

Bibliographical note

Funding Information:
Manuscript received June 29, 2001; revised October 19, 2001. The fabrication of the MMIC using the TRIQUINT GaAs foundry was supported by TELTRON, Taejon, Korea. The review of this letter was arranged by Associate Editor Dr. Arvind Sharma.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/7260.974557

Cite this

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title = "5∼6 GHz-band GaAs MESFET-based cross-coupled differential oscillator MMICs with low phase-noise performance",

abstract = "LC-tank oscillators in the 5∼6 GHz frequency range have been designed and implemented in a commercial 0.6 μm GaAs MESFET technology. One is a voltage-controlled oscillator (VCO), and the other is an oscillator without a controlling element. The output frequency range of the VCO is from 5.44 to 6.14 GHz, and the measured phase-noise is -101.67 dBc/Hz at an offset frequency of 600 KHz from the 5.44 GHz carrier. The phase-noise of the 6.44 GHz oscillator is - 108 dBc/Hz at an offset frequency of 600 KHz, and the phase-noise curve, in the offset frequency range between 100 KHz and 1 MHz, shows a - 20 dB/decade slope. These phase-noise characteristics are comparable to, or better than, those of the reported 5∼6 GHz-band CMOS oscillators. To our knowledge, this is the first GaAs MESFET-based oscillator which has a cross-coupled differential topology and a capacitive coupling feedback to suppress the up-conversion of 1/f noise. Also, it is first reported that the GaAs MESFET-based oscillator shows 1/f 2 phase-noise behavior across the offset frequency range from 100 KHz to 1 MHz.",

author = "Yoon, {Sang Woong} and Park, {Eun Chul} and Lee, {Chang Ho} and Sanghoon Sim and Lee, {Sang Goog} and Euisik Yoon and Joy Laskar and Songcheol Hong",

note = "Funding Information: Manuscript received June 29, 2001; revised October 19, 2001. The fabrication of the MMIC using the TRIQUINT GaAs foundry was supported by TELTRON, Taejon, Korea. The review of this letter was arranged by Associate Editor Dr. Arvind Sharma.",

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AU - Yoon, Sang Woong

AU - Park, Eun Chul

AU - Lee, Chang Ho

AU - Sim, Sanghoon

AU - Lee, Sang Goog

AU - Yoon, Euisik

AU - Laskar, Joy

AU - Hong, Songcheol

N1 - Funding Information: Manuscript received June 29, 2001; revised October 19, 2001. The fabrication of the MMIC using the TRIQUINT GaAs foundry was supported by TELTRON, Taejon, Korea. The review of this letter was arranged by Associate Editor Dr. Arvind Sharma.

PY - 2001/12

Y1 - 2001/12

N2 - LC-tank oscillators in the 5∼6 GHz frequency range have been designed and implemented in a commercial 0.6 μm GaAs MESFET technology. One is a voltage-controlled oscillator (VCO), and the other is an oscillator without a controlling element. The output frequency range of the VCO is from 5.44 to 6.14 GHz, and the measured phase-noise is -101.67 dBc/Hz at an offset frequency of 600 KHz from the 5.44 GHz carrier. The phase-noise of the 6.44 GHz oscillator is - 108 dBc/Hz at an offset frequency of 600 KHz, and the phase-noise curve, in the offset frequency range between 100 KHz and 1 MHz, shows a - 20 dB/decade slope. These phase-noise characteristics are comparable to, or better than, those of the reported 5∼6 GHz-band CMOS oscillators. To our knowledge, this is the first GaAs MESFET-based oscillator which has a cross-coupled differential topology and a capacitive coupling feedback to suppress the up-conversion of 1/f noise. Also, it is first reported that the GaAs MESFET-based oscillator shows 1/f 2 phase-noise behavior across the offset frequency range from 100 KHz to 1 MHz.

AB - LC-tank oscillators in the 5∼6 GHz frequency range have been designed and implemented in a commercial 0.6 μm GaAs MESFET technology. One is a voltage-controlled oscillator (VCO), and the other is an oscillator without a controlling element. The output frequency range of the VCO is from 5.44 to 6.14 GHz, and the measured phase-noise is -101.67 dBc/Hz at an offset frequency of 600 KHz from the 5.44 GHz carrier. The phase-noise of the 6.44 GHz oscillator is - 108 dBc/Hz at an offset frequency of 600 KHz, and the phase-noise curve, in the offset frequency range between 100 KHz and 1 MHz, shows a - 20 dB/decade slope. These phase-noise characteristics are comparable to, or better than, those of the reported 5∼6 GHz-band CMOS oscillators. To our knowledge, this is the first GaAs MESFET-based oscillator which has a cross-coupled differential topology and a capacitive coupling feedback to suppress the up-conversion of 1/f noise. Also, it is first reported that the GaAs MESFET-based oscillator shows 1/f 2 phase-noise behavior across the offset frequency range from 100 KHz to 1 MHz.

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5∼6 GHz-band GaAs MESFET-based cross-coupled differential oscillator MMICs with low phase-noise performance

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