5.6-nm p +/n junction formation for sub-0.05-μm PMOSFETs by using low-energy B 10H 14 ion implantation

Hyun Soon Park, Kwangho Jeong, Hyo Won Suh, Hyung Jin Jung, Won Kook Choi

Research output: Contribution to journalArticle

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Abstract

Decaborane (B 10H 14) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p +/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 × 10 12 /cm 2 and 1 × 10 13 /cm 2. The implanted samples were then subjected to activation annealing at 800°C, 900°C, and 1000°C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D s) at a dosage of 1 × 10 13 /cm 2 was in the range 12 nm - 45 nm after annealing at 1000°C. D s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased, In particular, TED was suppressed in the p +/n junction implanted at 2 keV and a dosage of 1 × 10 13 /cm 2, and the formation of only a 5.6-nm ultra-shallow junction was identified, This kind of extreme suppression of D s is thought to result from the formation of well-localized damage with few interstitial defects, which act as a sinks, due to very low-energy cluster ion implantation near the surface region. The p +/n junction exhibited a leakage current density of 1.8 × 10 -12 A/μm 2 at -2 V.

Original languageEnglish
Pages (from-to)1594-1597
Number of pages4
JournalJournal of the Korean Physical Society
Volume44
Issue number6
Publication statusPublished - 2004 Jun 1

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p-n junctions
ion implantation
dosage
annealing
energy
thermal diffusion
sinks
secondary ion mass spectrometry
interstitials
ions
boron
leakage
monomers
retarding
activation
current density
damage
defects
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, Hyun Soon ; Jeong, Kwangho ; Suh, Hyo Won ; Jung, Hyung Jin ; Choi, Won Kook. / 5.6-nm p +/n junction formation for sub-0.05-μm PMOSFETs by using low-energy B 10H 14 ion implantation. In: Journal of the Korean Physical Society. 2004 ; Vol. 44, No. 6. pp. 1594-1597.
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5.6-nm p +/n junction formation for sub-0.05-μm PMOSFETs by using low-energy B 10H 14 ion implantation. / Park, Hyun Soon; Jeong, Kwangho; Suh, Hyo Won; Jung, Hyung Jin; Choi, Won Kook.

In: Journal of the Korean Physical Society, Vol. 44, No. 6, 01.06.2004, p. 1594-1597.

Research output: Contribution to journalArticle

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T1 - 5.6-nm p +/n junction formation for sub-0.05-μm PMOSFETs by using low-energy B 10H 14 ion implantation

AU - Park, Hyun Soon

AU - Jeong, Kwangho

AU - Suh, Hyo Won

AU - Jung, Hyung Jin

AU - Choi, Won Kook

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N2 - Decaborane (B 10H 14) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p +/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 × 10 12 /cm 2 and 1 × 10 13 /cm 2. The implanted samples were then subjected to activation annealing at 800°C, 900°C, and 1000°C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D s) at a dosage of 1 × 10 13 /cm 2 was in the range 12 nm - 45 nm after annealing at 1000°C. D s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased, In particular, TED was suppressed in the p +/n junction implanted at 2 keV and a dosage of 1 × 10 13 /cm 2, and the formation of only a 5.6-nm ultra-shallow junction was identified, This kind of extreme suppression of D s is thought to result from the formation of well-localized damage with few interstitial defects, which act as a sinks, due to very low-energy cluster ion implantation near the surface region. The p +/n junction exhibited a leakage current density of 1.8 × 10 -12 A/μm 2 at -2 V.

AB - Decaborane (B 10H 14) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p +/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 × 10 12 /cm 2 and 1 × 10 13 /cm 2. The implanted samples were then subjected to activation annealing at 800°C, 900°C, and 1000°C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D s) at a dosage of 1 × 10 13 /cm 2 was in the range 12 nm - 45 nm after annealing at 1000°C. D s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased, In particular, TED was suppressed in the p +/n junction implanted at 2 keV and a dosage of 1 × 10 13 /cm 2, and the formation of only a 5.6-nm ultra-shallow junction was identified, This kind of extreme suppression of D s is thought to result from the formation of well-localized damage with few interstitial defects, which act as a sinks, due to very low-energy cluster ion implantation near the surface region. The p +/n junction exhibited a leakage current density of 1.8 × 10 -12 A/μm 2 at -2 V.

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