5.6-nm p +/n junction formation for sub-0.05-μm PMOSFETs by using low-energy B 10H 14 ion implantation

Hyun Soon Park, Kwangho Jeong, Hyo Won Suh, Hyung Jin Jung, Won Kook Choi

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Abstract

Decaborane (B 10H 14) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p +/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 × 10 12 /cm 2 and 1 × 10 13 /cm 2. The implanted samples were then subjected to activation annealing at 800°C, 900°C, and 1000°C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D s) at a dosage of 1 × 10 13 /cm 2 was in the range 12 nm - 45 nm after annealing at 1000°C. D s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased, In particular, TED was suppressed in the p +/n junction implanted at 2 keV and a dosage of 1 × 10 13 /cm 2, and the formation of only a 5.6-nm ultra-shallow junction was identified, This kind of extreme suppression of D s is thought to result from the formation of well-localized damage with few interstitial defects, which act as a sinks, due to very low-energy cluster ion implantation near the surface region. The p +/n junction exhibited a leakage current density of 1.8 × 10 -12 A/μm 2 at -2 V.

Original languageEnglish
Pages (from-to)1594-1597
Number of pages4
JournalJournal of the Korean Physical Society
Volume44
Issue number6
Publication statusPublished - 2004 Jun 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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