60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate

Chang Soon Choi, Hyo Soon Kang, Dae Hyun Kim, Kwang Seok Seo, Woo Young Choi

Research output: Contribution to journalArticle

Abstract

This letter reports the demonstration of 60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a GaAs substrate. Using 10 GHz or 30 GHz local oscillator signals, we successfully up-convert optically transmitted 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing efficiencies on the bias conditions of the HEMT, we determine the optimum bias conditions for maximizing harmonic optoelectronic up-conversion efficiency.

Original languageEnglish
Pages (from-to)L658-L659
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number6 B
DOIs
Publication statusPublished - 2003 Jun 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of '60 GHz harmonic optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor on a GaAs substrate'. Together they form a unique fingerprint.

  • Cite this