60-GHz voltage-controlled oscillator and frequency divider in 0.25-μm SiGe BiCMOS technology

Jeong Min Lee, Woo-Young Choi, Holger Rucker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present an integrated 60-GHz voltage-controlled oscillator (VCO) and frequency divider (FD) chain in a 0.25-μm SiGe BiCMOS technology. To achieve the wide tuning range, the VCO employs a differential Colpitts configuration and the FD is a regenerative type based on Gilbert-cell mixer and bandpass filter. The VCO-FD chain achieves the tuning range from 54 to 63 GHz and the phase noise of -96.5 dBc/Hz at 1-MHz offset. The power consumption is 46 mW with supply voltage of 3.3 V excluding output buffers.

Original languageEnglish
Title of host publicationISOCC 2012 - 2012 International SoC Design Conference
Pages65-67
Number of pages3
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 International SoC Design Conference, ISOCC 2012 - Jeju Island, Korea, Republic of
Duration: 2012 Nov 42012 Nov 7

Publication series

NameISOCC 2012 - 2012 International SoC Design Conference

Other

Other2012 International SoC Design Conference, ISOCC 2012
CountryKorea, Republic of
CityJeju Island
Period12/11/412/11/7

Fingerprint

BiCMOS technology
Variable frequency oscillators
Tuning
Mixer circuits
Phase noise
Bandpass filters
Electric power utilization
Electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lee, J. M., Choi, W-Y., & Rucker, H. (2012). 60-GHz voltage-controlled oscillator and frequency divider in 0.25-μm SiGe BiCMOS technology. In ISOCC 2012 - 2012 International SoC Design Conference (pp. 65-67). [6406991] (ISOCC 2012 - 2012 International SoC Design Conference). https://doi.org/10.1109/ISOCC.2012.6406991
Lee, Jeong Min ; Choi, Woo-Young ; Rucker, Holger. / 60-GHz voltage-controlled oscillator and frequency divider in 0.25-μm SiGe BiCMOS technology. ISOCC 2012 - 2012 International SoC Design Conference. 2012. pp. 65-67 (ISOCC 2012 - 2012 International SoC Design Conference).
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abstract = "We present an integrated 60-GHz voltage-controlled oscillator (VCO) and frequency divider (FD) chain in a 0.25-μm SiGe BiCMOS technology. To achieve the wide tuning range, the VCO employs a differential Colpitts configuration and the FD is a regenerative type based on Gilbert-cell mixer and bandpass filter. The VCO-FD chain achieves the tuning range from 54 to 63 GHz and the phase noise of -96.5 dBc/Hz at 1-MHz offset. The power consumption is 46 mW with supply voltage of 3.3 V excluding output buffers.",
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Lee, JM, Choi, W-Y & Rucker, H 2012, 60-GHz voltage-controlled oscillator and frequency divider in 0.25-μm SiGe BiCMOS technology. in ISOCC 2012 - 2012 International SoC Design Conference., 6406991, ISOCC 2012 - 2012 International SoC Design Conference, pp. 65-67, 2012 International SoC Design Conference, ISOCC 2012, Jeju Island, Korea, Republic of, 12/11/4. https://doi.org/10.1109/ISOCC.2012.6406991

60-GHz voltage-controlled oscillator and frequency divider in 0.25-μm SiGe BiCMOS technology. / Lee, Jeong Min; Choi, Woo-Young; Rucker, Holger.

ISOCC 2012 - 2012 International SoC Design Conference. 2012. p. 65-67 6406991 (ISOCC 2012 - 2012 International SoC Design Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee JM, Choi W-Y, Rucker H. 60-GHz voltage-controlled oscillator and frequency divider in 0.25-μm SiGe BiCMOS technology. In ISOCC 2012 - 2012 International SoC Design Conference. 2012. p. 65-67. 6406991. (ISOCC 2012 - 2012 International SoC Design Conference). https://doi.org/10.1109/ISOCC.2012.6406991