We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering