7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology

Jin Sung Youn, Myung Jae Lee, Kang Yeob Park, Holger Rücker, Woo-Young Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-μm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.

Original languageEnglish
Pages (from-to)659-665
Number of pages7
Journalieice electronics express
Volume7
Issue number9
DOIs
Publication statusPublished - 2010 May 10

Fingerprint

BiCMOS technology
optical interconnects
Optical interconnects
Silicon
data transmission
bit error rate
Photodetectors
Bit error rate
Data communication systems
avalanches
photometers
CMOS
Metals
high speed
silicon
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Youn, Jin Sung ; Lee, Myung Jae ; Park, Kang Yeob ; Rücker, Holger ; Choi, Woo-Young. / 7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology. In: ieice electronics express. 2010 ; Vol. 7, No. 9. pp. 659-665.
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7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology. / Youn, Jin Sung; Lee, Myung Jae; Park, Kang Yeob; Rücker, Holger; Choi, Woo-Young.

In: ieice electronics express, Vol. 7, No. 9, 10.05.2010, p. 659-665.

Research output: Contribution to journalArticle

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AU - Choi, Woo-Young

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