A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

Yeomyung Kim, Woojun Choi, Jaehoon Kim, Sangho Lee, Hyeongon Kim, Kofi A.A. Makinwa, Youngcheol Chae, Tae Wook Kim, Sanghoon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.

Original languageEnglish
Title of host publicationESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference
EditorsFranz Dielacher, Wolfgang Pribyl, Gernot Hueber
PublisherIEEE Computer Society
Pages267-270
Number of pages4
ISBN (Electronic)9781467374705
DOIs
Publication statusPublished - 2015 Oct 30
Event41st European Solid-State Circuits Conference, ESSCIRC 2015 - Graz, Austria
Duration: 2015 Sep 142015 Sep 18

Publication series

NameEuropean Solid-State Circuits Conference
Volume2015-October
ISSN (Print)1930-8833

Other

Other41st European Solid-State Circuits Conference, ESSCIRC 2015
CountryAustria
CityGraz
Period15/9/1415/9/18

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Kim, Y., Choi, W., Kim, J., Lee, S., Kim, H., Makinwa, K. A. A., Chae, Y., Kim, T. W., & Lee, S. (2015). A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. In F. Dielacher, W. Pribyl, & G. Hueber (Eds.), ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference (pp. 267-270). [7313878] (European Solid-State Circuits Conference; Vol. 2015-October). IEEE Computer Society. https://doi.org/10.1109/ESSCIRC.2015.7313878