A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

Yeomyung Kim; Woojun Choi; Jaehoon Kim; Sangho Lee; Hyeongon Kim; Kofi A.A. Makinwa; Youngcheol Chae; Tae Wook Kim; Sanghoon Lee

doi:10.1109/ESSCIRC.2015.7313878

A 0.02mm² embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

Yeomyung Kim, Woojun Choi, Jaehoon Kim, Sangho Lee, Hyeongon Kim, Kofi A.A. Makinwa, Youngcheol Chae, Tae Wook Kim, Sanghoon Lee

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm², and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK². When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.

Original language	English
Title of host publication	ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference
Editors	Franz Dielacher, Wolfgang Pribyl, Gernot Hueber
Publisher	IEEE Computer Society
Pages	267-270
Number of pages	4
ISBN (Electronic)	9781467374705
DOIs	https://doi.org/10.1109/ESSCIRC.2015.7313878
Publication status	Published - 2015 Oct 30
Event	41st European Solid-State Circuits Conference, ESSCIRC 2015 - Graz, Austria Duration: 2015 Sep 14 → 2015 Sep 18

Publication series

Name	European Solid-State Circuits Conference
Volume	2015-October
ISSN (Print)	1930-8833

Other

Other	41st European Solid-State Circuits Conference, ESSCIRC 2015
Country/Territory	Austria
City	Graz
Period	15/9/14 → 15/9/18

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSCIRC.2015.7313878

Cite this

Kim, Y., Choi, W., Kim, J., Lee, S., Kim, H., Makinwa, K. A. A., Chae, Y., Kim, T. W., & Lee, S. (2015). A 0.02mm² embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. In F. Dielacher, W. Pribyl, & G. Hueber (Eds.), ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference (pp. 267-270). [7313878] (European Solid-State Circuits Conference; Vol. 2015-October). IEEE Computer Society. https://doi.org/10.1109/ESSCIRC.2015.7313878

Kim, Yeomyung ; Choi, Woojun ; Kim, Jaehoon ; Lee, Sangho ; Kim, Hyeongon ; Makinwa, Kofi A.A. ; Chae, Youngcheol ; Kim, Tae Wook ; Lee, Sanghoon. / A 0.02mm² embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. editor / Franz Dielacher ; Wolfgang Pribyl ; Gernot Hueber. IEEE Computer Society, 2015. pp. 267-270 (European Solid-State Circuits Conference).

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title = "A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM",

abstract = "This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.",

author = "Yeomyung Kim and Woojun Choi and Jaehoon Kim and Sangho Lee and Hyeongon Kim and Makinwa, {Kofi A.A.} and Youngcheol Chae and Kim, {Tae Wook} and Sanghoon Lee",

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Kim, Y, Choi, W, Kim, J, Lee, S, Kim, H, Makinwa, KAA, Chae, Y , Kim, TW & Lee, S 2015, A 0.02mm² embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. in F Dielacher, W Pribyl & G Hueber (eds), ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference., 7313878, European Solid-State Circuits Conference, vol. 2015-October, IEEE Computer Society, pp. 267-270, 41st European Solid-State Circuits Conference, ESSCIRC 2015, Graz, Austria, 15/9/14. https://doi.org/10.1109/ESSCIRC.2015.7313878

A 0.02mm² embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. / Kim, Yeomyung; Choi, Woojun; Kim, Jaehoon; Lee, Sangho; Kim, Hyeongon; Makinwa, Kofi A.A.; Chae, Youngcheol ; Kim, Tae Wook; Lee, Sanghoon.

ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. ed. / Franz Dielacher; Wolfgang Pribyl; Gernot Hueber. IEEE Computer Society, 2015. p. 267-270 7313878 (European Solid-State Circuits Conference; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Kim Y, Choi W, Kim J, Lee S, Kim H, Makinwa KAA et al. A 0.02mm² embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. In Dielacher F, Pribyl W, Hueber G, editors, ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. IEEE Computer Society. 2015. p. 267-270. 7313878. (European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2015.7313878