A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

Yeomyung Kim, Woojun Choi, Jaehoon Kim, Sangho Lee, Hyeongon Kim, Kofi A.A. Makinwa, Youngcheol Chae, tae wook Kim, Sanghoon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.

Original languageEnglish
Title of host publicationESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference
EditorsFranz Dielacher, Wolfgang Pribyl, Gernot Hueber
PublisherIEEE Computer Society
Pages267-270
Number of pages4
ISBN (Electronic)9781467374705
DOIs
Publication statusPublished - 2015 Oct 30
Event41st European Solid-State Circuits Conference, ESSCIRC 2015 - Graz, Austria
Duration: 2015 Sep 142015 Sep 18

Publication series

NameEuropean Solid-State Circuits Conference
Volume2015-October
ISSN (Print)1930-8833

Other

Other41st European Solid-State Circuits Conference, ESSCIRC 2015
CountryAustria
CityGraz
Period15/9/1415/9/18

Fingerprint

Dynamic random access storage
Temperature sensors
Trimming
Sensors
Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kim, Y., Choi, W., Kim, J., Lee, S., Kim, H., Makinwa, K. A. A., ... Lee, S. (2015). A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. In F. Dielacher, W. Pribyl, & G. Hueber (Eds.), ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference (pp. 267-270). [7313878] (European Solid-State Circuits Conference; Vol. 2015-October). IEEE Computer Society. https://doi.org/10.1109/ESSCIRC.2015.7313878
Kim, Yeomyung ; Choi, Woojun ; Kim, Jaehoon ; Lee, Sangho ; Kim, Hyeongon ; Makinwa, Kofi A.A. ; Chae, Youngcheol ; Kim, tae wook ; Lee, Sanghoon. / A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. editor / Franz Dielacher ; Wolfgang Pribyl ; Gernot Hueber. IEEE Computer Society, 2015. pp. 267-270 (European Solid-State Circuits Conference).
@inproceedings{97ad9f3bc7114d7aae04d26e5bad3ce3,
title = "A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM",
abstract = "This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.",
author = "Yeomyung Kim and Woojun Choi and Jaehoon Kim and Sangho Lee and Hyeongon Kim and Makinwa, {Kofi A.A.} and Youngcheol Chae and Kim, {tae wook} and Sanghoon Lee",
year = "2015",
month = "10",
day = "30",
doi = "10.1109/ESSCIRC.2015.7313878",
language = "English",
series = "European Solid-State Circuits Conference",
publisher = "IEEE Computer Society",
pages = "267--270",
editor = "Franz Dielacher and Wolfgang Pribyl and Gernot Hueber",
booktitle = "ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference",
address = "United States",

}

Kim, Y, Choi, W, Kim, J, Lee, S, Kim, H, Makinwa, KAA, Chae, Y, Kim, TW & Lee, S 2015, A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. in F Dielacher, W Pribyl & G Hueber (eds), ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference., 7313878, European Solid-State Circuits Conference, vol. 2015-October, IEEE Computer Society, pp. 267-270, 41st European Solid-State Circuits Conference, ESSCIRC 2015, Graz, Austria, 15/9/14. https://doi.org/10.1109/ESSCIRC.2015.7313878

A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. / Kim, Yeomyung; Choi, Woojun; Kim, Jaehoon; Lee, Sangho; Kim, Hyeongon; Makinwa, Kofi A.A.; Chae, Youngcheol; Kim, tae wook; Lee, Sanghoon.

ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. ed. / Franz Dielacher; Wolfgang Pribyl; Gernot Hueber. IEEE Computer Society, 2015. p. 267-270 7313878 (European Solid-State Circuits Conference; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM

AU - Kim, Yeomyung

AU - Choi, Woojun

AU - Kim, Jaehoon

AU - Lee, Sangho

AU - Kim, Hyeongon

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

AU - Kim, tae wook

AU - Lee, Sanghoon

PY - 2015/10/30

Y1 - 2015/10/30

N2 - This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.

AB - This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.

UR - http://www.scopus.com/inward/record.url?scp=84958753366&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958753366&partnerID=8YFLogxK

U2 - 10.1109/ESSCIRC.2015.7313878

DO - 10.1109/ESSCIRC.2015.7313878

M3 - Conference contribution

T3 - European Solid-State Circuits Conference

SP - 267

EP - 270

BT - ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference

A2 - Dielacher, Franz

A2 - Pribyl, Wolfgang

A2 - Hueber, Gernot

PB - IEEE Computer Society

ER -

Kim Y, Choi W, Kim J, Lee S, Kim H, Makinwa KAA et al. A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. In Dielacher F, Pribyl W, Hueber G, editors, ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. IEEE Computer Society. 2015. p. 267-270. 7313878. (European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2015.7313878