Abstract
This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.
| Original language | English |
|---|---|
| Title of host publication | ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference |
| Editors | Franz Dielacher, Wolfgang Pribyl, Gernot Hueber |
| Publisher | IEEE Computer Society |
| Pages | 267-270 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781467374705 |
| DOIs | |
| Publication status | Published - 2015 Oct 30 |
| Event | 41st European Solid-State Circuits Conference, ESSCIRC 2015 - Graz, Austria Duration: 2015 Sep 14 → 2015 Sep 18 |
Publication series
| Name | European Solid-State Circuits Conference |
|---|---|
| Volume | 2015-October |
| ISSN (Print) | 1930-8833 |
Other
| Other | 41st European Solid-State Circuits Conference, ESSCIRC 2015 |
|---|---|
| Country | Austria |
| City | Graz |
| Period | 15/9/14 → 15/9/18 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
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A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. / Kim, Yeomyung; Choi, Woojun; Kim, Jaehoon; Lee, Sangho; Kim, Hyeongon; Makinwa, Kofi A.A.; Chae, Youngcheol; Kim, Tae Wook; Lee, Sanghoon.
ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference. ed. / Franz Dielacher; Wolfgang Pribyl; Gernot Hueber. IEEE Computer Society, 2015. p. 267-270 7313878 (European Solid-State Circuits Conference; Vol. 2015-October).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM
AU - Kim, Yeomyung
AU - Choi, Woojun
AU - Kim, Jaehoon
AU - Lee, Sangho
AU - Kim, Hyeongon
AU - Makinwa, Kofi A.A.
AU - Chae, Youngcheol
AU - Kim, Tae Wook
AU - Lee, Sanghoon
PY - 2015/10/30
Y1 - 2015/10/30
N2 - This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.
AB - This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.
UR - http://www.scopus.com/inward/record.url?scp=84958753366&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958753366&partnerID=8YFLogxK
U2 - 10.1109/ESSCIRC.2015.7313878
DO - 10.1109/ESSCIRC.2015.7313878
M3 - Conference contribution
AN - SCOPUS:84958753366
T3 - European Solid-State Circuits Conference
SP - 267
EP - 270
BT - ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference
A2 - Dielacher, Franz
A2 - Pribyl, Wolfgang
A2 - Hueber, Gernot
PB - IEEE Computer Society
ER -