@inproceedings{97ad9f3bc7114d7aae04d26e5bad3ce3,
title = "A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM",
abstract = "This paper describes an all-CMOS embedded temperature sensor that directly controls the self-refresh period of a 25nm mobile DRAM. It occupies 0.02mm2, and achieves 0.04°C resolution and ±2°C accuracy from 20°C to 95°C after a single temperature trim. This performance is enabled by the use of dynamic threshold MOSFETs as temperature sensing devices, and by using chopping and trimming to mitigate the effects of device mismatch and process spread. The sensor consumes 9uW at a conversion rate of 7-kHz and a resolution of 50mK, which corresponds to a resolution FoM of 3.2pJK2. When used to control the self-refresh period of an 8GB mobile DRAM, the sensor reduces its standby current by 7x over a 20°C to 95°C range.",
author = "Yeomyung Kim and Woojun Choi and Jaehoon Kim and Sangho Lee and Hyeongon Kim and Makinwa, {Kofi A.A.} and Youngcheol Chae and Kim, {Tae Wook} and Sanghoon Lee",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.; 41st European Solid-State Circuits Conference, ESSCIRC 2015 ; Conference date: 14-09-2015 Through 18-09-2015",
year = "2015",
month = oct,
day = "30",
doi = "10.1109/ESSCIRC.2015.7313878",
language = "English",
series = "European Solid-State Circuits Conference",
publisher = "IEEE Computer Society",
pages = "267--270",
editor = "Franz Dielacher and Wolfgang Pribyl and Gernot Hueber",
booktitle = "ESSCIRC 2015 - Proceedings of the 41st European Solid-State Circuits Conference",
address = "United States",
}