A voltage-mode transmitter (TX) with a predriver and a receiver (RX) with an energy-efficient level shifter (LS) is proposed to reduce power consumption in the heavy load of a through-silicon via (TSV) input-output (I/O) interface. An N-over-N (NN) driver with the proposed predriver reduces VOH drift to enhance jitter characteristics. In addition, the swing level of the transmitted signal can be lowered to 600 mV with a single supply voltage at the TX. To recover the swing level, the RX is designed with the proposed LS that can operate with a data rate of 5 Gb/s. An 8-stacked TSV is emulated in the 65 nm CMOS process, and the emulated capacitance of each stack is 100 fF. The energy efficiency is 0.166 pJ/b/pF with a pseudorandom binary sequence (PRBS)-7 at 5 Gb/s and 0.205 pJ/b/pF with a PRBS-31 at 3.5 Gb/s.
|Number of pages||5|
|Journal||IEEE Transactions on Circuits and Systems II: Express Briefs|
|Publication status||Published - 2021 Jun|
Bibliographical noteFunding Information:
Manuscript received November 1, 2020; revised November 18, 2020; accepted November 19, 2020. Date of publication November 24, 2020; date of current version May 27, 2021. This work was supported by Samsung Electronics Company, Ltd., Hwaseong, South Korea. This brief was recommended by Associate Editor Y. Pu. (Corresponding author: Seong-Ook Jung.) Ji-Young Kim, Jongsoo Lee, Kiryong Kim, and Seong-OoK Jung are with the School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: email@example.com).
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering